All

What are you looking for?

All
Projects
Results
Organizations

Quick search

  • Projects supported by TA ČR
  • Excellent projects
  • Projects with the highest public support
  • Current projects

Smart search

  • That is how I find a specific +word
  • That is how I leave the -word out of the results
  • “That is how I can find the whole phrase”
8F15002

WISEGaN - New generation of InGaN layers, quantum wells and wires grown on vicinal GaN substrates for optoelectronics and photovoltaics

Public support

  • Provider

    Ministry of Education, Youth and Sports

  • Programme

  • Call for proposals

  • Main participants

    Univerzita Karlova / Matematicko-fyzikální fakulta

  • Contest type

    M2 - International cooperation

  • Contract ID

    MSMT-31729/2015-1

Alternative language

  • Project name in Czech

    WISEGaN - New generation of InGaN layers, quantum wells and wires grown on vicinal GaN substrates for optoelectronics and photovoltaics

  • Annotation in Czech

    InGaN layers, quantum wells and wires are the most important parts of such devices as blue/green LEDs, superluminescent LEDs (SLEDs), laser diodes (LDs), and photovoltaic cells. However, InGaN is very difficult to be grown because of low growth temperature and large lattice mismatch of InN and GaN. These two factors cause formation of many extended defects, as In-fluctuations and misfit dislocations, as well as of point defects: vacancies, interstitials and impurities. In the Project, we are going to develop technology of InGaN epi-structures which will have a high In-content but less microstructural defects compared to the previous generations of this material. The idea of the Project is to use technology of prepatterned GaN substrates with local off-orientations and sequential flow of In-precursor to obtain more uniform InGaN 3-dimensional structures with lower defect concentration. In particular, we will focus on lattice relaxation that takes place when InGaN thickness and In-content are too high. This relaxation will be examined ex-situ and in-situ using advanced methods of X-ray Diffraction and other methods. As a result of the Project, we will get new generations of InGaN layers, quantum wells and wires which will be used for constructing the blue and green emitters (LEDs, SLEDs and LDs) and photovoltaic cells.

Scientific branches

  • R&D category

    ZV - Basic research

  • CEP classification - main branch

    BM - Solid-state physics and magnetism

  • CEP - secondary branch

    JA - Electronics and optoelectronics

  • CEP - another secondary branch

  • OECD FORD - equivalent branches <br>(according to the <a href="http://www.vyzkum.cz/storage/att/E6EF7938F0E854BAE520AC119FB22E8D/Prevodnik_oboru_Frascati.pdf">converter</a>)

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)<br>20201 - Electrical and electronic engineering

Completed project evaluation

  • Provider evaluation

    U - Uspěl podle zadání (s publikovanými či patentovanými výsledky atd.)

  • Project results evaluation

    Following the condition that the candidate of financial contribution was evaluated and afterwards selected by international provider in accordance with the rules of the program the Ministry of Education, Youth ans Sports does not realize the evaluation of project.

Solution timeline

  • Realization period - beginning

    Oct 1, 2015

  • Realization period - end

    Dec 31, 2018

  • Project status

    U - Finished project

  • Latest support payment

    Feb 14, 2018

Data delivery to CEP

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

  • Data delivery code

    CEP19-MSM-8F-U/01:1

  • Data delivery date

    Jun 18, 2019

Finance

  • Total approved costs

    3,480 thou. CZK

  • Public financial support

    3,480 thou. CZK

  • Other public sources

    0 thou. CZK

  • Non public and foreign sources

    0 thou. CZK