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Structure and magnetic properties of epitaxial GaMnAs thin layers

Project goals

Magnetic properties of ferromagnetic semiconductor epitaxial layers of GaMnAs are strongly influenced by their structure, mainly by the concentration of Mn atoms in substitutional and interstitial positions. The goal of the project is to study the structural properties of GaMnAs and their correlation with magnetic parameters (the Curie temperature, magnetic moments). We also intend to investigate the changes in the density of Mn interstitials and corresponding changes in the magnetic parameters ofthe layers during their annealing at moderate temperatures (about 200°C). Further goal of the project is the study of ferromagnetic precipitates MnAs in GaMnAs layers and MnAs quantum dots on the layer surface; these objects are created by annealing of GaMnAsat higher temperatures (about 600°C). The structure of the layers of GaMnAs will be investigated by surface-sensitive x-ray diffraction, by the x-ray standing-wave method and by x-ray absorption spectroscopy; MnAs precipitates and quantum dots

Keywords

ferromagnetismsemiconductorsepitaxial layersdefects

Public support

  • Provider

    Czech Science Foundation

  • Programme

    Standard projects

  • Call for proposals

    Standardní projekty 9 (SGA02006GA-ST)

  • Main participants

  • Contest type

    VS - Public tender

  • Contract ID

    202/06/0025

Alternative language

  • Project name in Czech

    Struktura a magnetické vlastnosti epitaxních vrstev GaMnAs

  • Annotation in Czech

    Magnetické vlastnosti feromagnetických polovodivých epitaxních vrstev GaMnAs jsou určovány jejich strukturou, zejména koncentrací substitučních a intersticiálních atomů Mn. Cílem projektu je studium strukturních vlastností GaMnAs a jejich korelace s magnetickými parametry (magnetizace, Curieova teplota). Sledovat se budou také změny koncentrace intersticiálního Mn a magnetických vlastností během žíhání vrstev GaMnAs při teplotách kolem 200 °C. Dalším cílem projektu je studium precipitátů feromagnetickéfáze MnAs ve vrstvách GaMnAs a kvantových teček MnAs na povrchu vrstev; tyto objekty vznikají žíháním vrstev GaMnAs za vyšších teplot (asi 600°C). Struktura GaMnAs se bude studovat povrchově citlivou rtg difrakcí, metodou rtg stojaté vlny a rtg absorpčníspektroskopií, MnAs precipitáty a kvantové tečky budou studovány i maloúhlým rtg rozptylem a anomální difrakcí u absorpční hrany Mn. Magnetické vlastnosti budou vyšetřovány magnetometrií a měřením magnetotransportu.

Scientific branches

  • R&D category

    ZV - Basic research

  • CEP classification - main branch

    BM - Solid-state physics and magnetism

  • CEP - secondary branch

  • CEP - another secondary branch

  • 10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Completed project evaluation

  • Provider evaluation

    U - Uspěl podle zadání (s publikovanými či patentovanými výsledky atd.)

  • Project results evaluation

    We have studied the structure of ferromagnetic thin layers of (Ga,Mn)As using x-ray methods, namely x-ray diffraction, x-ray standing-wave method and x-ray absorption spectroscopy. We determined the dependence of the density of Mn interstitial atoms in (

Solution timeline

  • Realization period - beginning

    Jan 1, 2006

  • Realization period - end

    Dec 31, 2008

  • Project status

    U - Finished project

  • Latest support payment

    Apr 25, 2008

Data delivery to CEP

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

  • Data delivery code

    CEP09-GA0-GA-U/02:2

  • Data delivery date

    Oct 22, 2009

Finance

  • Total approved costs

    2,135 thou. CZK

  • Public financial support

    2,135 thou. CZK

  • Other public sources

    0 thou. CZK

  • Non public and foreign sources

    0 thou. CZK

Basic information

Recognised costs

2 135 CZK thou.

Public support

2 135 CZK thou.

100%


Provider

Czech Science Foundation

CEP

BM - Solid-state physics and magnetism

Solution period

01. 01. 2006 - 31. 12. 2008