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38 (0,085s) •

Project

New 2D layered chalcogenides thin films and 3D nanostructures Synthesis and characterization (GA15-07912S)

Metal organic vapor phase epitaxy (MOVPE) is leading technology for preparation of semiconductor structures for electronic and optoelectronic devices. MOVPE successful properties by growing of MOVPE epitaxial structures; 4)...

CA - Anorganická chemie

  • 2015 - 2017
    • •
  • 7 673 tis. Kč
    • •
  • 7 673 tis. Kč
    • •
  • GA ČR
Project

Advanced room temperature Mid-IR antimovy based lasers by MOVPE (OK 312)

bude dodáno ve verzi 2...

BM - Fyzika pevných látek a magnetismus

  • 1998 - 2000
    • •
  • 8 000 tis. Kč
    • •
  • 3 000 tis. Kč
    • •
  • MŠMT
Project

Chemical aspects of thin layer deposition of the AIII-nitrides in relation to electronic applications (GA104/03/0387)

OrganicVapour Phase Epitaxy (MOVPE) has became the leading technology for preparation serious problems exist in the MOVPE. Lack of the substrate materials lattice-nitrides by the MOVPE. Composition of these solutions will ...

JA - Elektronika a optoelektronika, elektrotechnika

  • 2003 - 2005
    • •
  • 1 811 tis. Kč
    • •
  • 1 811 tis. Kč
    • •
  • GA ČR
Project

Controlled quantum dot MOVPE growth (IAA100100719)

This project aims at the development of semiconductor Quantum Dots (QDs) with predetermined and controlled size and shape from InAs and later from GaSb, using MOVPE. Optical and electrical properties of QD structures are often determined mor...

BM - Fyzika pevných látek a magnetismus

  • 2007 - 2009
    • •
  • 1 763 tis. Kč
    • •
  • 1 763 tis. Kč
    • •
  • AV ČR
Project

MOVPE prepared materials and structures for electronic and optoelectronic devices (GA102/99/0414)

During the period of the last six years Institute of Physics AV-CR has gradually developed the MOVPE(Metal-Organic Vapour Phase Epitaxy) technology of thin and ultrathin layer deposition of AIIIBV semiconductors. Co-operating laboratories bo...

JA - Elektronika a optoelektronika, elektrotechnika

  • 1999 - 2001
    • •
  • 6 849 tis. Kč
    • •
  • 4 789 tis. Kč
    • •
  • GA ČR
Project

Quantum dots in III - V semiconductors (GA202/99/1613)

epitaxy (MOVPE) using the Stranski-Krastanow growth mechanism. Influencing of the MOVPE structures with similar samples grown by molecular beam epitaxy (MBE......

BM - Fyzika pevných látek a magnetismus

  • 1999 - 2001
    • •
  • 1 700 tis. Kč
    • •
  • 1 330 tis. Kč
    • •
  • GA ČR
Project

Quantum dots for detectors and other devices (GAP102/10/1201)

This project aims at the development of semiconductor Quantum Dots (QDs) based on InAs/GaAs and later from GaSb, using MOVPE. Optical and electrical properties of QD structures are often determined more by the size and shape, than by the mat...

JA - Elektronika a optoelektronika, elektrotechnika

  • 2010 - 2012
    • •
  • 953 tis. Kč
    • •
  • 953 tis. Kč
    • •
  • GA ČR
Project

Preparation and characterization of epitaxial semiconductor MOVPE layers and structure based on GaSb (GA202/98/P254)

The aim of the project is in characterising and optimising the growth of GaSb based semiconductor layers from different precursors using Metal}{lang1029 -}{Organic Vapour Phase Epitaxy (MOVPE). These materials may be suitable namely for the ...

BM - Fyzika pevných látek a magnetismus

  • 1998 - 2001
    • •
  • 656 tis. Kč
    • •
  • 558 tis. Kč
    • •
  • GA ČR
Project

Research structures for electronics and optoelectronics prepared by metalorganic vapour phase epitaxy (GA102/96/1703)

The aim of the project is to promote the activity and cooperation between the first and only (in the Czech Rep.) MOVPE technological laboratory in the Inst. of Phys. and the four Czech Universities. The main interest is in the thin AIII BV o...

BM - Fyzika pevných látek a magnetismus

  • 1996 - 1998
    • •
  • 8 426 tis. Kč
    • •
  • 4 523 tis. Kč
    • •
  • GA ČR
Project

Strained quantum size semiconductor structures prepared by MOVPE (GP202/02/D069)

to the design and MOVPE preparation of QD and IDL structures based on InAs/GaAs and InSb...

BM - Fyzika pevných látek a magnetismus

  • 2002 - 2005
    • •
  • 580 tis. Kč
    • •
  • 580 tis. Kč
    • •
  • GA ČR
  • 1 - 10 out of 38