Filters
Project
Development of Novel Technologies for Trench Insulated Gate Bipolar Transistors (TIGBT) Manufacturing (TH01010419)
Research and development of advanced wafers with SOI structure as a substrate material for TIGBT technology. Research and development of manufacturing process of TIGBT technology for reduction of conductivity and switching losses. R...
JA - Elektronika a optoelektronika, elektrotechnika
- 2015 - 2017 •
- 32 969 tis. Kč •
- 19 233 tis. Kč •
- TA ČR
Řešení projektu: 1. 1. 2015 - 31. 12. 2017
Uznané náklady
Podpora ze státního rozpočtu (58%)
Poskytovatel: Technologická agentura ČR
- 1 - 1 out of 1