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Development of Novel Technologies for Trench Insulated Gate Bipolar Transistors (TIGBT) Manufacturing (TH01010419)

Research and development of advanced wafers with SOI structure as a substrate material for TIGBT technology. Research and development of manufacturing process of TIGBT technology for reduction of conductivity and switching losses. R...

JA - Elektronika a optoelektronika, elektrotechnika

  • 2015 - 2017
  • 32 969 tis. Kč
  • 19 233 tis. Kč
  • TA ČR
  • 1 - 1 out of 1