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1 747 (0,346s) •

Project

Synthesis of GaN epitaxial layers by mono-energetic mass selective ion beams of very low energies (ME 334)

Synthesis of GaN epitaxial layers by mono-energetic mass selective ion beams of very low energies...

BM - Fyzika pevných látek a magnetismus

  • 1999 - 2001
    • •
  • 2 225 tis. Kč
    • •
  • 1 645 tis. Kč
    • •
  • MŠMT
Project

Experimental development of MOCVD apparatus for high temperature growth of A(III)B(V) semiconductors and applied research of metal-nitrides epitaxial thin film growth (TH02020926)

- development of MOCVD epitaxial growth apparatus for A(III)B(V) layers on substrates up to 100 mm diameter - testing of MOCVD epitaxial growth of indium-nitride layers using the existing "low temperature" MOCVD ap...

BM - Fyzika pevných látek a magnetismus

  • 2017 - 2019
    • •
  • 35 026 tis. Kč
    • •
  • 20 987 tis. Kč
    • •
  • TA ČR
Project

Electronic and structural properties of three-dimensional topological insulators (GAP204/12/0595)

on the epitaxial layers so far. The aim of this project is to study the electronic properties of the topological insulator epitaxial layers, their structural properties and the dependence of the electronic propert...

BM - Fyzika pevných látek a magnetismus

  • 2012 - 2014
    • •
  • 4 594 tis. Kč
    • •
  • 4 594 tis. Kč
    • •
  • GA ČR
Project

Diffuse x-ray scattering from dislocations in epitaxial layers (GP202/04/P258)

and correlation of the dislocation positions. Measurements are carried out on epitaxial layers Ge on Si substrates and on constant and graded layers SiGe on Si. InformationThe proposed project will be devoted to experiment...

BM - Fyzika pevných látek a magnetismus

  • 2004 - 2006
    • •
  • 553 tis. Kč
    • •
  • 553 tis. Kč
    • •
  • GA ČR
Project

Structure and magnetic properties of epitaxial GaMnAs thin layers (GA202/06/0025)

Magnetic properties of ferromagnetic semiconductor epitaxial layers of GaMnAs layers during their annealing at moderate temperatures (about 200°C). Further goal of the project is the study of ferromagnetic precipitates MnAs...

BM - Fyzika pevných látek a magnetismus

  • 2006 - 2008
    • •
  • 2 135 tis. Kč
    • •
  • 2 135 tis. Kč
    • •
  • GA ČR
Project

Preparation and application of the AIII-nitride epitaxial layers for optical wavequides and sensor structures distillation columns design (GA104/00/0572)

The study of the epitaxial layers of the AIII-nitride semiconducting materials with a direct energy band gap greater than 2,5eV has a extraordinary importance with regard of the AIII-nitride epitaxial structures and optical...

JA - Elektronika a optoelektronika, elektrotechnika

  • 2000 - 2002
    • •
  • 3 069 tis. Kč
    • •
  • 2 147 tis. Kč
    • •
  • GA ČR
Project

Research and Development of Technologies of Manufacturing of Novel Species of Silicon Wafers (FR-TI3/031)

manufacturing and epitaxial layers growth. There are subjects of R&D of crystal growth (110 suitable for advanced semiconductor applications. R&D of Advanced EPItaxial layers homogeneity of layer thicknes...

JJ - Ostatní materiály

  • 2011 - 2012
    • •
  • 11 503 tis. Kč
    • •
  • 3 870 tis. Kč
    • •
  • MPO
Project

Strain engineering in diluted magnetic semiconductors (GP202/09/P410)

on the elastic strain and magnetic properties of the epitaxial (Ga,Mn)As layer grown on GaAs substrate. We will focus especially on the lithographically modified single epitaxial layer and the influence of pattern...

BM - Fyzika pevných látek a magnetismus

  • 2009 - 2011
    • •
  • 656 tis. Kč
    • •
  • 656 tis. Kč
    • •
  • GA ČR
Project

Role of the interface in the preparation of high quality Schottky barriers on III-V semiconductors. (LD12014)

The project focuses on the deposition of metal nanoparticles onto surfaces of epitaxial layers of III-V semiconductors to prepare high-quality Schottky barriers and to investigate their potential application in the detection of haza...

JA - Elektronika a optoelektronika, elektrotechnika

  • 2012 - 2013
    • •
  • 1 000 tis. Kč
    • •
  • 1 000 tis. Kč
    • •
  • MŠMT
Project

Epitaxial overgrowth on/in porous A3B5 semiconductors (GA202/06/1315)

In the scope of the nanotechnologies development the epitaxial growth layers could  improve the structural perfection of the highly mismatched of the porous layers will be studied. At first lateral overgrowth methode, secon...

BM - Fyzika pevných látek a magnetismus

  • 2006 - 2007
    • •
  • 1 043 tis. Kč
    • •
  • 1 043 tis. Kč
    • •
  • GA ČR
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