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141 (0,215s) •

Project

Atomistic simulations of epitaxial growth of multicomponent materials (OC P3.130)

The project aims at theoretical investigation of epitaxial growth of multicomponent materials on the atomic level using computer modelling of microscopic processes on metal as well as semiconductor surfaces. We shall investigate formation of...

BM - Fyzika pevných látek a magnetismus

  • 1999 - 2001
    • •
  • 2 030 tis. Kč
    • •
  • 785 tis. Kč
    • •
  • MŠMT
Project

Synthesis of GaN epitaxial layers by mono-energetic mass selective ion beams of very low energies (ME 334)

Synthesis of GaN epitaxial layers by mono-energetic mass selective ion beams of very low energies...

BM - Fyzika pevných látek a magnetismus

  • 1999 - 2001
    • •
  • 2 225 tis. Kč
    • •
  • 1 645 tis. Kč
    • •
  • MŠMT
Project

Anion-doped perovskite oxides by advanced epitaxy (GA19-09671S)

in epitaxial films is yet another tool for tuning the properties. Epitaxial anion-stimulated epitaxy in reactive gas ambience will be elaborated to deposit doped single and properties of epitaxial complex mixed-an...

Materials engineering

  • 2019 - 2021
    • •
  • 6 659 tis. Kč
    • •
  • 6 608 tis. Kč
    • •
  • GA ČR
Project

Epitaxial effects in ferrolectric nanofilms probed by spectroscopic ellipsometry (GA15-13778S)

The project deals with experimental studies of electronic transitions in perovskite-type epitaxial ferroelectric nanofilms. Through combining ellipsometric studies, macroscopic examination of the ferroelectric polarization, and materials cha...

BL - Fyzika plasmatu a výboje v plynech

  • 2015 - 2017
    • •
  • 4 730 tis. Kč
    • •
  • 4 730 tis. Kč
    • •
  • GA ČR
Project

Experimental development of MOCVD apparatus for high temperature growth of A(III)B(V) semiconductors and applied research of metal-nitrides epitaxial thin film growth (TH02020926)

- development of MOCVD epitaxial growth apparatus for A(III)B(V) layers on substrates up to 100 mm diameter - testing of MOCVD epitaxial growth of indium-nitride in the field of optical structures and sensors - development of MOCVD ...

BM - Fyzika pevných látek a magnetismus

  • 2017 - 2019
    • •
  • 35 026 tis. Kč
    • •
  • 20 987 tis. Kč
    • •
  • TA ČR
Project

Ballistic electron emission microscopy and spectroscopy of InAs quantum dots prepared by different technologies (GPP102/11/P824)

grown by molecular beam epitaxy (MBE) and by metalorganic vapor phase epitaxy MOVPE....

JA - Elektronika a optoelektronika, elektrotechnika

  • 2011 - 2015
    • •
  • 1 405 tis. Kč
    • •
  • 1 405 tis. Kč
    • •
  • GA ČR
Project

Epitaxially stabilized perovskite ferroelectro-magnetic solid solutions (GA15-15123S)

by heteroepitaxial thin-film growth of new phases. Growth of epitaxially-stabilized solid techniques. The relationship between epitaxially controlled composition understanding of nanoscale phenomena in epitaxial perovskite...

BM - Fyzika pevných látek a magnetismus

  • 2015 - 2017
    • •
  • 4 729 tis. Kč
    • •
  • 4 729 tis. Kč
    • •
  • GA ČR
Project

Scanning tunneling microscopy of initial stages of metal epitaxy on Si(001) and Si (111) surfaces (GA202/97/1109)

We propose a study of initial stages of metal epitaxy on silicon surfaces using scanning tunneling microscospy. In particular, we want to investigate densities, size of epitaxial growth of various metals as a function of surface cov...

BM - Fyzika pevných látek a magnetismus

  • 1997 - 1999
    • •
  • 974 tis. Kč
    • •
  • 443 tis. Kč
    • •
  • GA ČR
Project

Electronic and structural properties of three-dimensional topological insulators (GAP204/12/0595)

on the epitaxial layers so far. The aim of this project is to study the electronic properties of the topological insulator epitaxial layers, their structural properties and the dependence of the electronic properties on the structu...

BM - Fyzika pevných látek a magnetismus

  • 2012 - 2014
    • •
  • 4 594 tis. Kč
    • •
  • 4 594 tis. Kč
    • •
  • GA ČR
Project

Development of epitaxial-graphene transistor utilizing optical doping (GA22-20020S)

Due to its technologically simple and cheap fabrication, epitaxial graphene grown on silicon carbide substrates is a good candidate for being a common material, in which the epitaxial graphene forms the source-drain channel with bac...

Condensed matter physics (including formerly solid state physics, supercond.)

  • 2022 - 2024
    • •
  • 6 289 tis. Kč
    • •
  • 6 289 tis. Kč
    • •
  • GA ČR
  • 1 - 10 out of 141