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10 (0,071s) •

Project

Novel Wide Bandgap Semiconductor Materials and Devices (TH01011284)

Research and Development of Novel Wide Band Gap Semiconductor Material - especially the structures of GaN/AlGaN/AlN/Si. Research and Development of Novel Semiconductor Devices Based on Wide Band Gap Materials - especially GaN HEMT (High-Elec...

JA - Elektronika a optoelektronika, elektrotechnika

  • 2015 - 2017
    • •
  • 31 897 tis. Kč
    • •
  • 18 879 tis. Kč
    • •
  • TA ČR
Project

Advanced ceramic materials and technologies for power electronics - POKER (FW01010067)

The main project goal is aimed to R&D of technology of high power microelectronic modules production on high thermal conductivity ceramic substrates. The project issues include AlN substrates production (pressing, debinding and firing at hig...

Electrical and electronic engineering

  • 2020 - 2023
    • •
  • 36 695 tis. Kč
    • •
  • 25 542 tis. Kč
    • •
  • TA ČR
Project

Smart High voltage Aditive MANufactured modules - SHAMAN (FW10010062)

The project aim is R&D of technologies for the production of electronic modules on ceramic substrates for high voltage (HV) power applications. The main topics are new planar and structural substrates including sandwich arrangements of AlN a...

Electrical and electronic engineering

  • 2024 - 2026
    • •
  • 24 171 tis. Kč
    • •
  • 16 783 tis. Kč
    • •
  • TA ČR
Project

Experimental development of MOCVD apparatus for high temperature growth of A(III)B(V) semiconductors and applied research of metal-nitrides epitaxial thin film growth (TH02020926)

on specific metal-nitride layers growth(GaN, AlN, InN) to - development of applications...

BM - Fyzika pevných látek a magnetismus

  • 2017 - 2019
    • •
  • 35 026 tis. Kč
    • •
  • 20 987 tis. Kč
    • •
  • TA ČR
Project

Novel semiconductor structures for advanced electronic applications (TH02010014)

The project aims to industrial research and experimental development of heteroepitaxial growth of nitride structures for semiconductor applications: 1) RaD of technology for MOCVD growth of functional nitride structures on developed substrates with d...

JA - Elektronika a optoelektronika, elektrotechnika

  • 2017 - 2020
    • •
  • 28 119 tis. Kč
    • •
  • 16 819 tis. Kč
    • •
  • TA ČR
Project

Research and development and industrializartion of novel super hard nanocrystalline materials (ME 367)

Development and industrialization of new superhard nanocristalline TiN/AlN/SiN coatings in collaboration with the Institut for Inorganic Materials, Munich, Germany and SHM company will be realized. Department of Physical Electronics will spe...

BL - Fyzika plasmatu a výboje v plynech

  • 2000 - 2002
    • •
  • 3 112 tis. Kč
    • •
  • 530 tis. Kč
    • •
  • MŠMT
Project

Exploitation of surface phenomena for elimination of extended defects in semiconductor nanostructures (GA24-12526S)

-by-layer fashion by ALD (PLD) will enable manufacturing of high-quality AlN/Si{111...

Materials engineering

  • 2024 - 2026
    • •
  • 6 291 tis. Kč
    • •
  • 6 291 tis. Kč
    • •
  • GA ČR
Project

Thin Films of Magnetically Doped A(iii)N Semiconductors for Spin Electronics Applications (GA104/06/0642)

)into GaN (AlN) thin layers: (a) ion implantation followed by annealing, (b) diffusion...

CA - Anorganická chemie

  • 2006 - 2008
    • •
  • 3 039 tis. Kč
    • •
  • 3 039 tis. Kč
    • •
  • GA ČR
Project

Nanoscale characterization of materials and devices (8E15B004)

determination of thin film materials (SiO2, SiN, AlN, SiCOH, Cu, AlCu, TiO2, BN, nanoribbons...

BM - Fyzika pevných látek a magnetismus

  • 2016 - 2017
    • •
  • 395 tis. Kč
    • •
  • 288 tis. Kč
    • •
  • MŠMT
Project

Theory-guided design of novel superlattice nanocomposites (8J18AT008)

binary AlN, TiN, CrN, and VN as the basic building blocks of our model multilayer...

Condensed matter physics (including formerly solid state physics, supercond.)

  • 2018 - 2019
    • •
  • 196 tis. Kč
    • •
  • 196 tis. Kč
    • •
  • MŠMT
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