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39 (0,091s) •

Project

Affordable smart GaN IC solutions as enabler of greener applications (9A23004)

O1: Push the limits of industrial GaN devices and system-on-chip approaches for 100V. O2: Leverage the full potential of innovative substrates for GaN. O3: Achieve novel benchmark solutions for lateral GaN devices and integ...

Electrical and electronic engineering

  • 2023 - 2026
    • •
  • 40 971 tis. Kč
    • •
  • 8 195 tis. Kč
    • •
  • MŠMT
Project

Affordable smart GaN IC solutions as enabler of greener applications (9A23005)

O1: Push the limits of industrial GaN devices and system-on-chip approaches for 100V. O2: Leverage the full potential of innovative substrates for GaN. O3: Achieve novel benchmark solutions for lateral GaN devices and integ...

Electrical and electronic engineering

  • 2023 - 2026
    • •
  • 7 621 tis. Kč
    • •
  • 4 954 tis. Kč
    • •
  • MŠMT
Project

GaN for Advanced Power Applications (8A21007)

and management with advanced architecture of the art GaN-based High Electron Mobility; 2 for highly efficient power transistors; 3) Develop a new generation of vertical power GaN based devices on MOSFET architecture with vertical p...

Electrical and electronic engineering

  • 2021 - 2025
    • •
  • 13 745 tis. Kč
    • •
  • 8 936 tis. Kč
    • •
  • MŠMT
Project

Synthesis of GaN epitaxial layers by mono-energetic mass selective ion beams of very low energies (ME 334)

Synthesis of GaN epitaxial layers by mono-energetic mass selective ion beams of very low energies...

BM - Fyzika pevných látek a magnetismus

  • 1999 - 2001
    • •
  • 2 225 tis. Kč
    • •
  • 1 645 tis. Kč
    • •
  • MŠMT
Project

Electronic Performance Enhancement of Diamond-GaN Hybrid Structures Using Engineered Strains (GP14-16549P)

) on GaN substrates (AlGaN/GaN on Si or sapphire, and metal contacts). Different to the crystallographic and thermal mismatch between diamond and GaN will be engineered by process and HEMT transistors on diamond-GaN

BM - Fyzika pevných látek a magnetismus

  • 2014 - 2016
    • •
  • 2 026 tis. Kč
    • •
  • 2 026 tis. Kč
    • •
  • GA ČR
Project

Novel Wide Bandgap Semiconductor Materials and Devices (TH01011284)

Research and Development of Novel Wide Band Gap Semiconductor Material - especially the structures of GaN/AlGaN/AlN/Si. Research and Development of Novel Semiconductor Devices Based on Wide Band Gap Materials - especially GaN HEMT (...

JA - Elektronika a optoelektronika, elektrotechnika

  • 2015 - 2017
    • •
  • 31 897 tis. Kč
    • •
  • 18 879 tis. Kč
    • •
  • TA ČR
Project

Thin films of magnetically doped GaN (GA13-20507S)

computing and communication technologies.We aim to study the wide-gap GaN where metal (TM) and rare earths (RE) will be doped into thin layers of the host GaN structure. Simultaneously, TM and RE doped bulk GaN samples wil...

CA - Anorganická chemie

  • 2013 - 2016
    • •
  • 8 054 tis. Kč
    • •
  • 8 054 tis. Kč
    • •
  • GA ČR
Project

Structures for fast, energy-efficient and logic electronics based on GaN (FEELGaN) (GA25-18221S)

GaN based electronics is newly developing semiconductor field for high of proposed project promise important improvement of GaN-based HEMT technology. Frequency of AlGaN/GaN interface. Reliability and electron channel prope...

Condensed matter physics (including formerly solid state physics, supercond.)

  • 2025 - 2027
    • •
  • 6 793 tis. Kč
    • •
  • 6 752 tis. Kč
    • •
  • GA ČR
Project

GaN for Advanced Power Applications (8A21005)

block of this demonstrator will be a new power GaN component connected to a wireless of GaN chips....

Electrical and electronic engineering

  • 2021 - 2025
    • •
  • 9 081 tis. Kč
    • •
  • 1 816 tis. Kč
    • •
  • MŠMT
Project

Highly Efficient Controllers for High-speed Electrical Machines (TS02020056)

The project aims to create a high-efficiency motor controller for high-speed industrial rotating machines using GaN transistors. Furthermore, the goal is to reduce the number of circuit elements required, and very fast switching allows for o...

Energy and fuels

  • 2025 - 2027
    • •
  • 18 525 tis. Kč
    • •
  • 11 111 tis. Kč
    • •
  • TA ČR
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