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87 (0,096s) •

Project

Novel Wide Bandgap Semiconductor Materials and Devices (TH01011284)

- especially the structures of GaN/AlGaN/AlN/Si. Research and Development of Novel Semiconductor Devices Based on Wide Band Gap Materials - especially GaN HEMT (High-Electron-Mobility Transistor). Researc...

JA - Elektronika a optoelektronika, elektrotechnika

  • 2015 - 2017
    • •
  • 31 897 tis. Kč
    • •
  • 18 879 tis. Kč
    • •
  • TA ČR
Project

Electronic Performance Enhancement of Diamond-GaN Hybrid Structures Using Engineered Strains (GP14-16549P)

and HEMT transistors on diamond-GaN heterostructures will be investigated by variety) on GaN substrates (AlGaN/GaN on Si or sapphire, and metal contacts). Different to the crystallographic and th...

BM - Fyzika pevných látek a magnetismus

  • 2014 - 2016
    • •
  • 2 026 tis. Kč
    • •
  • 2 026 tis. Kč
    • •
  • GA ČR
Project

Structures for fast, energy-efficient and logic electronics based on GaN (FEELGaN) (GA25-18221S)

of AlGaN/GaN interface. Reliability and electron channel properties of e-HEMT of proposed project promise important improvement of GaN-based HEMT technology. FrequencyGaN based electronics is new...

Condensed matter physics (including formerly solid state physics, supercond.)

  • 2025 - 2027
    • •
  • 6 793 tis. Kč
    • •
  • 6 752 tis. Kč
    • •
  • GA ČR
Project

Highly Efficient Controllers for High-speed Electrical Machines (TS02020056)

The project aims to create a high-efficiency motor controller for high-speed industrial rotating machines using GaN transistors. Furthermore, the goal is to reduce the number of circuit elements required, and very fast switching all...

Energy and fuels

  • 2025 - 2027
    • •
  • 18 525 tis. Kč
    • •
  • 11 111 tis. Kč
    • •
  • TA ČR
Project

Affordable smart GaN IC solutions as enabler of greener applications (9A23004)

O1: Push the limits of industrial GaN devices and system-on-chip approaches for 100V. O2: Leverage the full potential of innovative substrates for GaN. O3: Achieve novel benchmark solutions for lateral GaN devices and integ...

Electrical and electronic engineering

  • 2023 - 2026
    • •
  • 40 971 tis. Kč
    • •
  • 8 195 tis. Kč
    • •
  • MŠMT
Project

Affordable smart GaN IC solutions as enabler of greener applications (9A23005)

O1: Push the limits of industrial GaN devices and system-on-chip approaches for 100V. O2: Leverage the full potential of innovative substrates for GaN. O3: Achieve novel benchmark solutions for lateral GaN devices and integ...

Electrical and electronic engineering

  • 2023 - 2026
    • •
  • 7 621 tis. Kč
    • •
  • 4 954 tis. Kč
    • •
  • MŠMT
Project

Innovative charging station with GaN transistors (EG17_176/0015614)

of the charging station with GaN transistors one-phase and three-phase.The aim of the project is to analyze and synthesize the optimal configuration of a two-stage onboard charger with gallium nitride transistors, currentl...

Electrical and electronic engineering

  • 2019 - 2023
    • •
  • 21 798 tis. Kč
    • •
  • 0 tis. Kč
    • •
  • MPO
Project

Metal vacancies, their complexes and clusters in nitride semiconductors (GF22-28001K)

The project aim is to find a link between the concentration of vacancies in GaN, InGaN, AlGaN and AlInGaN layers and technological parameters of metalorganic vapor phase epitaxy. Technological conditions for clustering of vacancies ...

Condensed matter physics (including formerly solid state physics, supercond.)

  • 2022 - 2024
    • •
  • 8 870 tis. Kč
    • •
  • 8 576 tis. Kč
    • •
  • GA ČR
Project

Development of Advanced Devices for Global Communication (ME 285)

. Experiments are performed on submicron HEMT devices, thick film resistors and miniature...

JA - Elektronika a optoelektronika, elektrotechnika

  • 1998 - 2000
    • •
  • 840 tis. Kč
    • •
  • 700 tis. Kč
    • •
  • MŠMT
Project

GaN for Advanced Power Applications (8A21005)

developed within WinSiC project, including SiC transistors, therefore, the key building block of this demonstrator will be a new power GaN component connected to a wireless of GaN chips.......

Electrical and electronic engineering

  • 2021 - 2025
    • •
  • 9 081 tis. Kč
    • •
  • 1 816 tis. Kč
    • •
  • MŠMT
  • 1 - 10 out of 87