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1 170 (0,168s) •

Project

Advanced ceramic materials and technologies for power electronics - POKER (FW01010067)

The main project goal is aimed to R&D of technology of high power microelectronic modules production on high thermal conductivity ceramic substrates. The project issues include AlN substrates production (pressing, debinding and firi...

Electrical and electronic engineering

  • 2020 - 2023
    • •
  • 36 695 tis. Kč
    • •
  • 25 542 tis. Kč
    • •
  • TA ČR
Project

Novel Wide Bandgap Semiconductor Materials and Devices (TH01011284)

Research and Development of Novel Wide Band Gap Semiconductor Material - especially the structures of GaN/AlGaN/AlN/Si. Research and Development of Novel Semiconductor Devices Based on Wide Band Gap Materials - especially GaN HEMT (High-Electron-Mobi...

JA - Elektronika a optoelektronika, elektrotechnika

  • 2015 - 2017
    • •
  • 31 897 tis. Kč
    • •
  • 18 879 tis. Kč
    • •
  • TA ČR
Project

Experimental development of MOCVD apparatus for high temperature growth of A(III)B(V) semiconductors and applied research of metal-nitrides epitaxial thin film growth (TH02020926)

on substrates up to 100 mm diameter - testing of MOCVD epitaxial growth of indium-nitride layers using the existing "low temperature" MOCVD apparatus in CEITEC-VUT substrates on specific metal-nitride layers growt...

BM - Fyzika pevných látek a magnetismus

  • 2017 - 2019
    • •
  • 35 026 tis. Kč
    • •
  • 20 987 tis. Kč
    • •
  • TA ČR
Project

Processing of Intermetallic Layered Structures and Hypereutectic Aluminium-based Alloys Using Sacrificial Nickel Coatings (GPP107/12/P739)

on the subsequent annealing temperature, the intermetallic layers at substrate-coating interface and/or reinforced Al-rich nickel aluminide particles within the substrate can be formed. During annealing above the melting point of <...

JG - Hutnictví, kovové materiály

  • 2012 - 2014
    • •
  • 1 508 tis. Kč
    • •
  • 1 508 tis. Kč
    • •
  • GA ČR
Project

Polyborazylene as a precursor for the formation and deposition of boron nitride layers (EG17_176/0015523)

The project solves verification and implementation of new technology of polyborazylene as a new starting material for boric nitride coating. Due to its properties, the new starting material polyborazylene will be used as a starting material ...

Coating and films

  • 2019 - 2022
    • •
  • 9 311 tis. Kč
    • •
  • 0 tis. Kč
    • •
  • MPO
Project

Research and development of refining technologies for increasing of quality of aluminium alloys for high-performance quality castings (TH04010449)

Development and innovation of technology of production and refining of aluminium melts is the project’s aim. Pilot plant experiments, physical modelling together with operating verification will be used for creation of complex production imp...

Materials engineering

  • 2019 - 2022
    • •
  • 35 005 tis. Kč
    • •
  • 20 600 tis. Kč
    • •
  • TA ČR
Project

Novel semiconductor structures for advanced electronic applications (TH02010014)

of heteroepitaxial growth of nitride structures for semiconductor applications: 1) RaD of technology for MOCVD growth of functional nitride structures on developed substrates with diameter up 200 mm. 2) RaD and characteriz...

JA - Elektronika a optoelektronika, elektrotechnika

  • 2017 - 2020
    • •
  • 28 119 tis. Kč
    • •
  • 16 819 tis. Kč
    • •
  • TA ČR
Project

Controlled depostion compound and sandwiches thin films by vacuum reactive arc evaporation (GA106/96/0127)

nitride thin films deposition by vacuum reactive arc evaporation method first of all point of view material research: different thin films, influence substrate material on systemlayer-substrate and first of all mechanical ...

JK - Koroze a povrchové úpravy materiálu

  • 1996 - 1998
    • •
  • 1 871 tis. Kč
    • •
  • 1 721 tis. Kč
    • •
  • GA ČR
Project

Preparation and application of the AIII-nitride epitaxial layers for optical wavequides and sensor structures distillation columns design (GA104/00/0572)

of the AIII-nitride epitaxial structures and optical planar waveguides. Epitaxial AIII-nitride layers on the sapphire and silicon substrates will be prepared by the MOVPEThe study of the epitaxial layers of the AIII-ni...

JA - Elektronika a optoelektronika, elektrotechnika

  • 2000 - 2002
    • •
  • 3 069 tis. Kč
    • •
  • 2 147 tis. Kč
    • •
  • GA ČR
Project

Chemical aspects of thin layer deposition of the AIII-nitrides in relation to electronic applications (GA104/03/0387)

AIII-nitrides have been shown to be of both fundamental and practical interest serious problems exist in the MOVPE. Lack of the substrate materials lattice-matchedtoAIII-nitrides, different thermal stabilities of AIII-n...

JA - Elektronika a optoelektronika, elektrotechnika

  • 2003 - 2005
    • •
  • 1 811 tis. Kč
    • •
  • 1 811 tis. Kč
    • •
  • GA ČR
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