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12 (0,216s)

Project

Noise of HEMT for global communication (ME 605)

The project is dealing with up-to-date research topics of fluctuation phenomena in Quantum dots and HEMT structures. Methodology consists in experimental study of measurable quantities, as the period between two successive pulses, the noise ...

BM - Fyzika pevných látek a magnetismus

  • 2002 - 2004
  • 1 404 tis. Kč
  • 924 tis. Kč
  • MŠMT
Project

Low-frequency noise in submicron MOSFET and HEMT structures (GA102/08/0260)

The objective of this project is to achieve higher signal/noise ratio in submicron MOSFET and HEMT structures on the basis of low-frequency noise parameters assessment. We will thoroughly analyze the dependence of 1/f and RTS noise producers...

JA - Elektronika a optoelektronika, elektrotechnika

  • 2008 - 2010
  • 1 050 tis. Kč
  • 1 050 tis. Kč
  • GA ČR
Project

Structures for fast, energy-efficient and logic electronics based on GaN (FEELGaN) (GA25-18221S)

of proposed project promise important improvement of GaN-based HEMT technology. Frequency of AlGaN/GaN interface. Reliability and electron channel properties of e-HEMT of complementary HEMT structures based on InGaN cappin...

Condensed matter physics (including formerly solid state physics, supercond.)

  • 2025 - 2027
  • 6 793 tis. Kč
  • 6 752 tis. Kč
  • GA ČR
Project

Development of e-mode III-nitride devices for energy optimized agile power electronics (LTAIN19163)

D1 - lateral heterostructure design D2 - delivered vertical device structure design D3 - design of contacts for vertical devices S1a,b –lateral HEMT device - transfer of heterostructure for final device processing to India S2a,b - vertical ...

Nano-processes (applications on nano-scale); (biomaterials to be 2.9)

  • 2020 - 2022
  • 4 084 tis. Kč
  • 4 084 tis. Kč
  • MŠMT
Project

Development of Advanced Devices for Global Communication (ME 285)

. Experiments are performed on submicron HEMT devices, thick film resistors and miniature...

JA - Elektronika a optoelektronika, elektrotechnika

  • 1998 - 2000
  • 840 tis. Kč
  • 700 tis. Kč
  • MŠMT
Project

Novel Wide Bandgap Semiconductor Materials and Devices (TH01011284)

Research and Development of Novel Wide Band Gap Semiconductor Material - especially the structures of GaN/AlGaN/AlN/Si. Research and Development of Novel Semiconductor Devices Based on Wide Band Gap Materials - especially GaN HEMT (High-Elec...

JA - Elektronika a optoelektronika, elektrotechnika

  • 2015 - 2017
  • 31 897 tis. Kč
  • 18 879 tis. Kč
  • TA ČR
Project

Electronic Performance Enhancement of Diamond-GaN Hybrid Structures Using Engineered Strains (GP14-16549P)

and HEMT transistors on diamond-GaN heterostructures will be investigated by variety...

BM - Fyzika pevných látek a magnetismus

  • 2014 - 2016
  • 2 026 tis. Kč
  • 2 026 tis. Kč
  • GA ČR
Project

Novel semiconductor structures for advanced electronic applications (TH02010014)

for semiconductor applications (e.g. functional structures for HEMT). 3) RaD of new methods...

JA - Elektronika a optoelektronika, elektrotechnika

  • 2017 - 2020
  • 28 119 tis. Kč
  • 16 819 tis. Kč
  • TA ČR
Project

Noise sources in semiconductor materials and devices (GA102/05/2095)

- CdTe crystalline detectors, 2. submicron structures as MOSFETs and HEMTs and 3...

BM - Fyzika pevných látek a magnetismus

  • 2005 - 2007
  • 1 997 tis. Kč
  • 1 997 tis. Kč
  • GA ČR
Project

Affordable smart GaN IC solutions as enabler of greener applications (9A23004)

O1: Push the limits of industrial GaN devices and system-on-chip approaches for 100V. O2: Leverage the full potential of innovative substrates for GaN. O3: Achieve novel benchmark solutions for lateral GaN devices and integrated circuits. O4: Reach b...

Electrical and electronic engineering

  • 2023 - 2026
  • 40 971 tis. Kč
  • 8 195 tis. Kč
  • MŠMT
  • 1 - 10 out of 12