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10 480 (0,231s) •

Project

Noise of HEMT for global communication (ME 605)

The project is dealing with up-to-date research topics of fluctuation phenomena in Quantum dots and HEMT structures. Methodology consists in experimental study of measurable quantities, as the period between two successive pulses, t...

BM - Fyzika pevných látek a magnetismus

  • 2002 - 2004
    • •
  • 1 404 tis. Kč
    • •
  • 924 tis. Kč
    • •
  • MŠMT
Project

Low-frequency noise in submicron MOSFET and HEMT structures (GA102/08/0260)

The objective of this project is to achieve higher signal/noise ratio in submicron MOSFET and HEMT structures on the basis of low-frequency noise parameters assessment. We will thoroughly analyze the dependence of 1/f and RTS noise ...

JA - Elektronika a optoelektronika, elektrotechnika

  • 2008 - 2010
    • •
  • 1 050 tis. Kč
    • •
  • 1 050 tis. Kč
    • •
  • GA ČR
Project

Structures for fast, energy-efficient and logic electronics based on GaN (FEELGaN) (GA25-18221S)

of complementary HEMT structures based on InGaN capping. Function of this devices is based of proposed project promise important improvement of GaN-based HEMT technology. Frequency of AlGaN/GaN interface. Reliability and e...

Condensed matter physics (including formerly solid state physics, supercond.)

  • 2025 - 2027
    • •
  • 6 793 tis. Kč
    • •
  • 6 752 tis. Kč
    • •
  • GA ČR
Project

Development of e-mode III-nitride devices for energy optimized agile power electronics (LTAIN19163)

D1 - lateral heterostructure design D2 - delivered vertical device structure design D3 - design of contacts for vertical devices S1a,b –lateral HEMT device - transfer of heterostructure for final device processing to India S2a,b - ...

Nano-processes (applications on nano-scale); (biomaterials to be 2.9)

  • 2020 - 2022
    • •
  • 4 084 tis. Kč
    • •
  • 4 084 tis. Kč
    • •
  • MŠMT
Project

Novel Wide Bandgap Semiconductor Materials and Devices (TH01011284)

Research and Development of Novel Wide Band Gap Semiconductor Material - especially the structures of GaN/AlGaN/AlN/Si. Research and Development of Novel Semiconductor Devices Based on Wide Band Gap Materials - especially GaN HEMT (...

JA - Elektronika a optoelektronika, elektrotechnika

  • 2015 - 2017
    • •
  • 31 897 tis. Kč
    • •
  • 18 879 tis. Kč
    • •
  • TA ČR
Project

Development of Advanced Devices for Global Communication (ME 285)

. Experiments are performed on submicron HEMT devices, thick film resistors and miniature...

JA - Elektronika a optoelektronika, elektrotechnika

  • 1998 - 2000
    • •
  • 840 tis. Kč
    • •
  • 700 tis. Kč
    • •
  • MŠMT
Project

Electronic Performance Enhancement of Diamond-GaN Hybrid Structures Using Engineered Strains (GP14-16549P)

(nano- or poly-crystalline grains, porous structure, thickness). The induced strain and HEMT transistors on diamond-GaN heterostructures will be investigated by variety......

BM - Fyzika pevných látek a magnetismus

  • 2014 - 2016
    • •
  • 2 026 tis. Kč
    • •
  • 2 026 tis. Kč
    • •
  • GA ČR
Project

Novel semiconductor structures for advanced electronic applications (TH02010014)

of heteroepitaxial growth of nitride structures for semiconductor applications: 1) RaD of technology for MOCVD growth of functional nitride structures on developed substrates with diameter up 200 mm. 2) RaD and characterization of ...

JA - Elektronika a optoelektronika, elektrotechnika

  • 2017 - 2020
    • •
  • 28 119 tis. Kč
    • •
  • 16 819 tis. Kč
    • •
  • TA ČR
Project

Exploitation of surface phenomena for elimination of extended defects in semiconductor nanostructures (GA24-12526S)

, laser diodes, and HEMT transistors. Existing theoretical models of III-nitrides the determination of equilibrium structures but also the calculations of charge states} and GaN/Si{100} substrates for homoepitaxial growth by MOVPE. ...

Materials engineering

  • 2024 - 2026
    • •
  • 6 291 tis. Kč
    • •
  • 6 291 tis. Kč
    • •
  • GA ČR
Project

Noise sources in semiconductor materials and devices (GA102/05/2095)

- CdTe crystalline detectors, 2. submicron structures as MOSFETs and HEMTs and 3...

BM - Fyzika pevných látek a magnetismus

  • 2005 - 2007
    • •
  • 1 997 tis. Kč
    • •
  • 1 997 tis. Kč
    • •
  • GA ČR
  • 1 - 10 out of 10 480