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697 (0,11s) •

Project

Role of the interface in the preparation of high quality Schottky barriers on III-V semiconductors. (LD12014)

The project focuses on the deposition of metal nanoparticles onto surfaces of epitaxial layers of III-V semiconductors to prepare high-quality Schottky barriers and to investigate their potential application in the detection of haza...

JA - Elektronika a optoelektronika, elektrotechnika

  • 2012 - 2013
    • •
  • 1 000 tis. Kč
    • •
  • 1 000 tis. Kč
    • •
  • MŠMT
Project

Charge transport mechanism in Schottky contacts on one-dimensional ZnO nanostructures (GA15-17044S)

in Schottky barriers prepared on one-dimensional ZnO nanostructures. Vertical arrays, and structural properties. Schottky contacts to individual NRs and NWs and their arrays......

JA - Elektronika a optoelektronika, elektrotechnika

  • 2015 - 2017
    • •
  • 4 593 tis. Kč
    • •
  • 4 593 tis. Kč
    • •
  • GA ČR
Project

A systematic study of Schottky barrier height effect on energy filtering of electrons in thermoelectric nanocomposites. (GA16-07711S)

The proposed project focuses on study of influence of potential barrier height created by nano-inclusion in matrix of a thermoelectric material on electron energy filtering. The key objective of the studies consists in a systematic investiga...

CA - Anorganická chemie

  • 2016 - 2019
    • •
  • 6 881 tis. Kč
    • •
  • 6 350 tis. Kč
    • •
  • GA ČR
Project

InP Epitaxial Layers Prepared from Rare-Earth Treated Melts Growth, Characterization, and Application in Radiation Detectors. (GP102/08/P617)

. These layers are suitable for preparation of a Schottky contact with a large barrier height.Thick layers of p-type conductivity with a high quality Schottky contact can......

JA - Elektronika a optoelektronika, elektrotechnika

  • 2008 - 2010
    • •
  • 898 tis. Kč
    • •
  • 898 tis. Kč
    • •
  • GA ČR
Project

Study of metal nanoparticle layers deposited by electrophoresis on semiconductor III-V-N compounds (OC10021)

Films of metal nanoparticles of Pd, Pt, Ag and Au are deposited by electrophoresis on semiconductor surfaces of III-V-N compounds. The shape and size of nanoparticles in the colloid are monitored by microscopic methods. Deposited films are characteri...

BM - Fyzika pevných látek a magnetismus

  • 2010 - 2012
    • •
  • 1 500 tis. Kč
    • •
  • 1 500 tis. Kč
    • •
  • MŠMT
Project

Study of interfaces between metal nanoparticles and InP for gas sensing and radiations detection (KAN400670651)

of interfaces, in particular the potential barrier height and loss currents will be studied...

JA - Elektronika a optoelektronika, elektrotechnika

  • 2006 - 2008
    • •
  • 6 264 tis. Kč
    • •
  • 6 264 tis. Kč
    • •
  • AV ČR
Project

Tuneable electronic and optoelectronic devices on the epitaxial graphene/SiC platform (GJ16-15763Y)

Epitaxial graphene on SiC will be used for the fabrication of the novel tuneable electronic and optoelectronic devices. The main idea of the project is to use both unique properties of graphene, particularly low density of states and graphene semi-me...

JA - Elektronika a optoelektronika, elektrotechnika

  • 2016 - 2019
    • •
  • 5 676 tis. Kč
    • •
  • 5 676 tis. Kč
    • •
  • GA ČR
Project

Noise as Diagnostic Tool for Schottky and Could Electron Emission Cathodes (GA102/07/0113)

The proposed project is dealing with up-to-date research topics of fluctuation phenomena in Schottky and cold-field emission cathodes. Methodology consists in experimental study of measurable quantities, as the noise voltage or current and t...

JA - Elektronika a optoelektronika, elektrotechnika

  • 2007 - 2009
    • •
  • 1 615 tis. Kč
    • •
  • 1 615 tis. Kč
    • •
  • GA ČR
Project

Deep defects in semiconductors for optoelectronic applications (GA202/07/0525)

with highly asymmetric junction or Schottky barrier enabling us more unambiguous...

BM - Fyzika pevných látek a magnetismus

  • 2007 - 2009
    • •
  • 2 580 tis. Kč
    • •
  • 2 580 tis. Kč
    • •
  • GA ČR
Project

*Research and development of advanced complementary bipolar technology for manufacturing of integrated circuits. (FR-TI1/582)

with polysilicon emitters, trench isolation, high resistivity resistors, capacitor, Schottky diode, Zener diode, Schottky transistor, mono-Si resistors, etc., which would enable......

JA - Elektronika a optoelektronika, elektrotechnika

  • 2009 - 2012
    • •
  • 57 730 tis. Kč
    • •
  • 15 737 tis. Kč
    • •
  • MPO
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