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3 179 (0,085s) •

Project

Pyrolytic and photolytic approach for the deposition of novel Si/Ge/C materials (IAA400720616)

of the project is i) preparation of Si/Ge/C films by several deposition techniques and iiThe project will deal with the production of novel Si/Ge/C materials by means/Ge/C

CF - Fyzikální chemie a teoretická chemie

  • 2006 - 2008
    • •
  • 2 108 tis. Kč
    • •
  • 2 108 tis. Kč
    • •
  • AV ČR
Project

Preparation of the nanostructured Si/Ge/C deposits (GA203/09/1088)

not exceeding 500 °C for Si/Ge/C nanocables evtl. 900 °C for Si/C nanotubes.) with a Si-Ge bond are supposed to allow a preparation of nanowires with a jacket......

CF - Fyzikální chemie a teoretická chemie

  • 2009 - 2011
    • •
  • 3 121 tis. Kč
    • •
  • 3 121 tis. Kč
    • •
  • GA ČR
Project

Structure and properties of nanocrystalline materials Fe-X (X=C,Si,Mg,Ge) (OC 523.20)

Preparation and characterization of nanocrystalline powders of Fe-X (X=C,Si,Mg,Ge) alloys prepared by spark erosion technique.The main goal is to understand realtions between technology, structure, and electric and magnetic...

JJ - Ostatní materiály

  • 2000 - 2004
    • •
  • 3 593 tis. Kč
    • •
  • 1 340 tis. Kč
    • •
  • MŠMT
Project

Preparation of conducting and semiconducting polymers doped with nanoparticles and nanotubes on base carbon. (FI-IM3/061)

Preparation of conducting and semiconducting polymers doped with nanoparticles of active phase own production (C, SnO2, C-Si-P-In-Ga-As-Ge-Se C60 C70, MWNT, SWNT).......

CA - Anorganická chemie

  • 2006 - 2009
    • •
  • 26 310 tis. Kč
    • •
  • 11 880 tis. Kč
    • •
  • MPO
Project

Mechanical properties of Si-B-C-N films formed by reactive magnetron sputtering (GP106/02/D096)

Materials of the Si-B-C-N system are of special interest due to ability of these four elements to form short, covalent bonds. The Si-B-C-N films are expected to understanding the complex processes of forma...

JI - Kompositní materiály

  • 2002 - 2005
    • •
  • 428 tis. Kč
    • •
  • 428 tis. Kč
    • •
  • GA ČR
Project

Synthesis of new Si-O(N)-C materials by plasma enhanced CVD (1K05025)

The purpose of the project is the synthesis of new Si-O-C:H polymers variable in their nanostructure and organic-inorganic character and the synthesis of hard protective Si-O-C and Si-N-C films ex...

BL - Fyzika plasmatu a výboje v plynech

  • 2005 - 2007
    • •
  • 1 513 tis. Kč
    • •
  • 953 tis. Kč
    • •
  • MŠMT
Project

Behaviour of geochemical ?twins? Al/Ga and Si/Ge in different types of acid silicate melts (GAP210/10/1309)

Aim of this project is to define contents of Ga and Ge and establish the Al/Ga- and Si/Ge-ratios in different types of natural silicate melts (granitoids, micas, and amphiboles etc. We expect to find differences in the Al/G...

DD - Geochemie

  • 2010 - 2012
    • •
  • 1 960 tis. Kč
    • •
  • 1 960 tis. Kč
    • •
  • GA ČR
Project

Novel plasma sources for film deposition and surface modification (OC10045)

of carbon-based films, various oxide and nitride films and for deposition of high-temperature Si-B-C-N films.......

BL - Fyzika plasmatu a výboje v plynech

  • 2010 - 2012
    • •
  • 990 tis. Kč
    • •
  • 990 tis. Kč
    • •
  • MŠMT
Project

IR and UV laser induced photochemistry of disilanes for chemical vapour deposition of Si/C/H phases and chemical liquid deposition of polyhydridosilanes (ME 225)

The project addresses synthesis of a series of disilanes and photochemistry of these compounds in the gas and liquid phase. The photochemistry will be induced by radiation of IR and UV lasers and it is expected to yield novel Si/C/H...

CH - Jaderná a kvantová chemie, fotochemie

  • 1998 - 1999
    • •
  • 270 tis. Kč
    • •
  • 200 tis. Kč
    • •
  • MŠMT
Project

Diffuse x-ray scattering from dislocations in epitaxial layers (GP202/04/P258)

Ge on Si substrates and on constant and graded layers SiGe on Si. InformationThe proposed project will be devoted to experimental studies of dislocations in epitaxial thin films. We will focus mainly on diffuse x-...

BM - Fyzika pevných látek a magnetismus

  • 2004 - 2006
    • •
  • 553 tis. Kč
    • •
  • 553 tis. Kč
    • •
  • GA ČR
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