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Project

Traction inverters based on SiC semiconductor modules (EG15_018/0003317)

The aim of this project is the application of SiC semiconductors to traction converters, especially for urban public transport vehicles and suburban rail transport. Application of SiC semiconductors will allow more efficient use of ...

JO - Pozemní dopravní systémy a zařízení

  • 2015 - 2020
    • •
  • 26 836 tis. Kč
    • •
  • 6 287 tis. Kč
    • •
  • MPO
Project

Tuneable electronic and optoelectronic devices on the epitaxial graphene/SiC platform (GJ16-15763Y)

Epitaxial graphene on SiC will be used for the fabrication of the novel semi-metallic behaviour, and the semiconducting properties of the wide-band gap SiC and characterized using Residual Gas Analyser (RGA). The sandwiched SiC<...

JA - Elektronika a optoelektronika, elektrotechnika

  • 2016 - 2019
    • •
  • 5 676 tis. Kč
    • •
  • 5 676 tis. Kč
    • •
  • GA ČR
Project

Investigation of SiC nanostructures by optical and magnetic resonance methods perspective for integral optoelectronics and spintronics (GP13-06697P)

by high specific surfaces. In this framework, silicon carbide (SiC) is an appropriate size andstructure. The physical properties of nano- and micro-particles SiC in SiC nanostructures and their composites, affected on thei...

BM - Fyzika pevných látek a magnetismus

  • 2013 - 2014
    • •
  • 1 692 tis. Kč
    • •
  • 1 692 tis. Kč
    • •
  • GA ČR
Project

R&D of Radiation Tolerant Semiconductor Solutions (TK05020011)

R&D of radiation-tolerant semiconductors Development of semiconductor manufacturing process for SiC devices. Qualification of SiC semiconductor technology for radiation environment. Development of a radiation-tolerant SiC p...

Energy and fuels

  • 2023 - 2025
    • •
  • 32 897 tis. Kč
    • •
  • 18 249 tis. Kč
    • •
  • TA ČR
Project

Charge transport in SiC radiation detectors. (GA18-12449S)

Within the project transport properties of conducting and semiinsulating SiC material and properties of dominant defects and recombination centers with graphene contacts prepared by thermal decomposition of SiC. Properties of the pr...

Condensed matter physics (including formerly solid state physics, supercond.)

  • 2018 - 2023
    • •
  • 6 316 tis. Kč
    • •
  • 4 585 tis. Kč
    • •
  • GA ČR
Project

Laser grinding of silicon carbide for high-power semiconductor applications - LaPSiC (TQ16000033)

the Silicon-Carbide (SiC) in semiconductor fabrication. The grinding of SiC surface is done with diamond wheels. Due to the hardness of SiC the removal rate is r low the application with know-how in SiC semiconduc...

Materials engineering

  • 2025 - 2027
    • •
  • 26 167 tis. Kč
    • •
  • 18 773 tis. Kč
    • •
  • TA ČR
Project

Growth and processing of graphene layers on silicon carbide (GAP108/11/0894)

The project is targeted to the growth of thin graphene layers on SiC monocrystaline substrates and to the study of processes which lead to the conversion of Ni-type contact structures on SiC from Schottky to ohmic behaviour. The Ni/...

CA - Anorganická chemie

  • 2011 - 2014
    • •
  • 4 916 tis. Kč
    • •
  • 4 916 tis. Kč
    • •
  • GA ČR
Project

SiC Timepix detector (8X23035)

1) Development of a radiation detectors for detection and separation of charged and neutral particles in harsh environmental conditions as found around fusion reactors. This shall be achieved by the innovative combination of 4H-SiC with cutt...

Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)

  • 2023 - 2025
    • •
  • 339 tis. Kč
    • •
  • 232 tis. Kč
    • •
  • MŠMT
Project

Research and Development of Manufacturing Technologies for SiC Crystals and Wafers for Advanced Electronic Applications (EG20_321/0024782)

The aim of the project is research and development of a world-competitive technology for the production of silicon carbide substrate (SiC) for advanced semiconductor applications (MOSFET - Metal Oxide Semiconductor Field Effect Transistor fo...

Materials engineering

  • 2021 - 2024
    • •
  • 66 007 tis. Kč
    • •
  • 0 tis. Kč
    • •
  • MPO
Project

New type of frequency converter based on SiC/GaN optimized for PMSM motors (FW11020104)

research: 1. functional sample New type of SiC/GaN-based frequency converter optimized for PMSM motors, 2. functional sample Application platform and 3. utility model SiC/GaN......

Electrical and electronic engineering

  • 2024 - 2026
    • •
  • 11 372 tis. Kč
    • •
  • 8 852 tis. Kč
    • •
  • TA ČR
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