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593 (0,072s) •

Project

Examination of contrast in doped semiconductors with scanning low energy microscope with ultimate parameters (GP102/09/P543)

Our goal is to gather more complete information related to the origin of contrast between thedoped areas and semiconductor substrate, during examination in a scanning low energy electronmicroscope. The contrast mechanism, whether re...

JA - Elektronika a optoelektronika, elektrotechnika

  • 2009 - 2010
    • •
  • 567 tis. Kč
    • •
  • 567 tis. Kč
    • •
  • GA ČR
Project

Direct imaging of the dopant distribution in a semiconductor by means of low energy clectrons (GA102/05/2327)

The project aims at modelling the contrast mechanism valid for a pian view of patterned doping on a semiconductor substrate or variously doped layers in the cleaved cross-section of a multilayered structure when they are imaged with secondar...

JA - Elektronika a optoelektronika, elektrotechnika

  • 2005 - 2007
    • •
  • 2 675 tis. Kč
    • •
  • 1 675 tis. Kč
    • •
  • GA ČR
Project

Microstructure and functional properties refinement by dopant distribution in transparent ceramics – combined experimental and theoretical approach (GA20-14237S)

be provoked by adding a dopant. The proper function of the dopant is conditioned by its homogeneous distribution in the system. The project aims to describe the dopant with photoluminescent properties. The dopant ...

Optics (including laser optics and quantum optics)

  • 2020 - 2022
    • •
  • 6 815 tis. Kč
    • •
  • 6 815 tis. Kč
    • •
  • GA ČR
Project

Few-modes active waveguides in silicate glasses (GP102/03/D041)

containing laser active dopants with aim to optimize their active function, (ii) research intothe possibilities of localized doping of surface glass layers with active dopants glass layers containing active dopants using p...

BH - Optika, masery a lasery

  • 2003 - 2006
    • •
  • 712 tis. Kč
    • •
  • 712 tis. Kč
    • •
  • GA ČR
Project

Band-Gap Engineering in Unconventional Semiconductors (8F21010)

of the major focuses is on defect/dopant engineering of TMDC, hBN, diamond in which vacancies and dopants can act as single-photon emitters. The primary objectives of the joint project are to correlate the nature of defect/dopa...

Optics (including laser optics and quantum optics)

  • 2021 - 2024
    • •
  • 3 222 tis. Kč
    • •
  • 3 222 tis. Kč
    • •
  • MŠMT
Project

Mapping at a high spatial resolution of the local density of electron states via reflection of very slow electrons (GA202/04/0281)

the contrast mechanism and the imaging method will be applied to visualisation of the dopant distribution density in semiconductors at energies of their impurity levels......

BM - Fyzika pevných látek a magnetismus

  • 2004 - 2006
    • •
  • 2 658 tis. Kč
    • •
  • 1 658 tis. Kč
    • •
  • GA ČR
Project

Research and Development of Technologies of Manufacturing of Novel Species of Silicon Wafers (FR-TI3/031)

homogeneity of layer thickness and dopant concentration; controlled axial profile of dopant) of epitaxial layers on 200 mm silicon substrates.......

JJ - Ostatní materiály

  • 2011 - 2012
    • •
  • 11 503 tis. Kč
    • •
  • 3 870 tis. Kč
    • •
  • MPO
Project

Electronic properties of doped diamond in high electric fields (GA17-05259S)

outstanding properties, partial ionization of dopants and high resistivity of diamond to complete ionization of dopant under high electric fields. Despite its high potential orientations and dopant concentrations will be m...

BM - Fyzika pevných látek a magnetismus

  • 2017 - 2021
    • •
  • 5 938 tis. Kč
    • •
  • 4 912 tis. Kč
    • •
  • GA ČR
Project

Theoretical photochemistry in solid phase (8J23AT031)

which allows to provide a dynamic view on the electronic properties of dopants into photochemical reactions of dopant molecules with O2. • New computational protocols based......

Physical chemistry

  • 2023 - 2024
    • •
  • 96 tis. Kč
    • •
  • 96 tis. Kč
    • •
  • MŠMT
Project

New large-molecular borane chemistry with an aim towards boron-dopant compounds for semiconductor industry (GP203/06/P398)

This proposal is aimed at the development of large-molecular, or 'macropolyhedral', boron hydride chemistry, with a focus on the generation of new macropolyhedral borane assemblies suitable for their application in the semiconductor manufacturing ind...

CA - Anorganická chemie

  • 2006 - 2008
    • •
  • 1 120 tis. Kč
    • •
  • 1 120 tis. Kč
    • •
  • GA ČR
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