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368 (0,057s) •

Project

New and enhanced silicon thin-film solar cells (NEST) (OK 268)

Development of photovoltaic solar cell based on tandem amorphous silicon and microcrystalline silicon. Optimalization of optical and photoelectrical properties of microcrystalline silicon.......

BM - Fyzika pevných látek a magnetismus

  • 1997 - 1999
    • •
  • 4 245 tis. Kč
    • •
  • 4 245 tis. Kč
    • •
  • MŠMT
Project

Microcrystalline and nanocrystalline semiconductors for photonics Electronic processes on the scales of nanometers and femtoseconds (IAA1010316)

will be devoted to the preparation and experimental study of 1. Si and SiC microcrystalline...

BM - Fyzika pevných látek a magnetismus

  • 2003 - 2007
    • •
  • 24 840 tis. Kč
    • •
  • 7 390 tis. Kč
    • •
  • AV ČR
Project

Nonlinear optical properties of non-crystalline forms of silicon (GA202/98/P243)

The project is devoted to an investigation of nonlinear optical properties of noncrystalline forms of silicon (hydrogenated amorphous silicon, microcrystalline silicon of noncrystalline forms of silicon (h...

BM - Fyzika pevných látek a magnetismus

  • 1998 - 2001
    • •
  • 1 203 tis. Kč
    • •
  • 1 203 tis. Kč
    • •
  • GA ČR
Project

R&D of Silicon Carbide Semiconductor Structures (FW06010030)

R&D of technology for the production of polished and epitaxial silicon carbide wafers with a diameter of 200 mm for semiconductor applications. R&D of technology for the production of semiconductor devices based on silicon ...

Materials engineering

  • 2023 - 2025
    • •
  • 33 230 tis. Kč
    • •
  • 19 970 tis. Kč
    • •
  • TA ČR
Project

Diagnostics of the non-crystalline forms of silicon with nanometer and femtosecond resolution (IAA1010809)

Two model non-crystalline forms of Si,both of great technol.importance (e.g.for solar photovoltaics,flat panel displays etc.),will be mainly in the focus of the project: amorphous hydrogenated silicon (a-Si:H)and microcrystalline

BM - Fyzika pevných látek a magnetismus

  • 1998 - 2002
    • •
  • 43 180 tis. Kč
    • •
  • 6 979 tis. Kč
    • •
  • AV ČR
Project

Monocrystalline silicon carbide for next-generation of quantum photonics devices (TQ15000016)

We will prepare an optical metasurface for quantum applications on a single crystal silicon carbide wafer that is optically active in the visible region of the spectrum and has a functional area of at least one square millimeter. Fo...

Optics (including laser optics and quantum optics)

  • 2025 - 2026
    • •
  • 6 092 tis. Kč
    • •
  • 4 992 tis. Kč
    • •
  • TA ČR
Project

Research and Development of New Generation Silicon Carbide Briquettes in Order to Improve Their Utility Attributes (TH02020729)

The main aim of the project is creating new recipes for silicon carbide briquettes bonded with cement, which should improve not only their physical and material characteristics defined foundry industry for which these products are p...

JG - Hutnictví, kovové materiály

  • 2017 - 2019
    • •
  • 7 957 tis. Kč
    • •
  • 4 733 tis. Kč
    • •
  • TA ČR
Project

Laser grinding of silicon carbide for high-power semiconductor applications - LaPSiC (TQ16000033)

The project objective is to utilize high energy/high power lasers for grinding the Silicon-Carbide (SiC) in semiconductor fabrication. The grinding of SiC surface is done with diamond wheels. Due to the hardness of SiC the removal r...

Materials engineering

  • 2025 - 2027
    • •
  • 26 167 tis. Kč
    • •
  • 18 773 tis. Kč
    • •
  • TA ČR
Project

Research and Development of Manufacturing Technologies for SiC Crystals and Wafers for Advanced Electronic Applications (EG20_321/0024782)

The aim of the project is research and development of a world-competitive technology for the production of silicon carbide substrate (SiC) for advanced semiconductor applications (MOSFET - Metal Oxide Semiconductor Field Effect Tran...

Materials engineering

  • 2021 - 2024
    • •
  • 66 007 tis. Kč
    • •
  • 0 tis. Kč
    • •
  • MPO
Project

Growth and processing of graphene layers on silicon carbide (GAP108/11/0894)

of research will be oriented to the study of VLS epitaxial growth of silicon carbide...

CA - Anorganická chemie

  • 2011 - 2014
    • •
  • 4 916 tis. Kč
    • •
  • 4 916 tis. Kč
    • •
  • GA ČR
  • 1 - 10 out of 368