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3 840 (0,142s) •

Project

Metastable point defects in semiconductors (IAA167108)

BM - Fyzika pevných látek a magnetismus

  • 1993 - 1995
    • •
  • 175 tis. Kč
    • •
  • 350 tis. Kč
    • •
  • AV ČR
Project

Metal vacancies, their complexes and clusters in nitride semiconductors (GF22-28001K)

of vacancies with other point defects will be defined. Variable energy positron of vacancy-containing defects and their concentration will help us to disclose the effect of particular native point defects...

Condensed matter physics (including formerly solid state physics, supercond.)

  • 2022 - 2024
    • •
  • 8 870 tis. Kč
    • •
  • 8 576 tis. Kč
    • •
  • GA ČR
Project

Transition metal doped Bi2O2Se layered semiconductors correlation of transport, magnetic and thermoelectric properties (GA22-05919S)

of intrinsic point defects. • Possibility of magnetic order induced by TMs (theoreticallyWe propose to study the influence of transition metals (TM) on transport, magnetic and thermoelectric properties of quasi-2D semiconductor...

Condensed matter physics (including formerly solid state physics, supercond.)

  • 2022 - 2024
    • •
  • 8 065 tis. Kč
    • •
  • 8 020 tis. Kč
    • •
  • GA ČR
Project

Defects in Wide-Bandgap Semiconductors and Their Impact on Power and High-Temperature Electronics (GAP102/12/2108)

The aim of the grant project is to perform a detailed study of the point defect structure of semiconductor devices processed from wide bandgap materials the most relevant from which is nowadays the silicon carbide (SiC). Th...

JA - Elektronika a optoelektronika, elektrotechnika

  • 2012 - 2014
    • •
  • 2 914 tis. Kč
    • •
  • 2 914 tis. Kč
    • •
  • GA ČR
Project

Defect self-compensation in CdTe (GA202/08/0644)

centers and simultaneous strong compensation of shallow defects in the crystal. Even in the best quality materials the density of shallow defects at least 100x exceeds maximum defects with much lower density of deep levels...

BM - Fyzika pevných látek a magnetismus

  • 2008 - 2010
    • •
  • 2 457 tis. Kč
    • •
  • 2 457 tis. Kč
    • •
  • GA ČR
Project

Diagnostics of material defects using the latest defectoscopic methods (GD102/09/H074)

The submitted project is oriented toward improving the quality of the research and scientific education of PhD students in the field of analysis of material defects, and further toward the support and coordination of research activities with...

BM - Fyzika pevných látek a magnetismus

  • 2009 - 2012
    • •
  • 8 000 tis. Kč
    • •
  • 8 000 tis. Kč
    • •
  • GA ČR
Project

Deep defects in semiconductors for optoelectronic applications (GA202/07/0525)

The main aim of the project proposed is to study deep defects in semiconductor structures by means of appropriate experimental methods, mainly Deep Level Transient and structures containing wide band-gap semiconductors such...

BM - Fyzika pevných látek a magnetismus

  • 2007 - 2009
    • •
  • 2 580 tis. Kč
    • •
  • 2 580 tis. Kč
    • •
  • GA ČR
Project

Surface migration and reconstruction in the konetics of A3B5 layer growth and a new model for the calculation of the point defects concentration (IAA2067901)

The Burton-Cabrera-Frank (BCF) theory occupies a central position in the field of vapour phase growth and is also significant for growth from the melt. The basic theory of BCF has been developed to describe the growth mechanisms when single atoms or ...

JA - Elektronika a optoelektronika, elektrotechnika

  • 1999 - 2001
    • •
  • 2 126 tis. Kč
    • •
  • 975 tis. Kč
    • •
  • AV ČR
Project

Hydrogen interaction with defects in zirconia (KJB101120906)

Proposed project deals with characterization of point defects in ZrO2 and investigation of hydrogen interaction with these defects. Defect studies will be performed to introduction of high density of point...

BM - Fyzika pevných látek a magnetismus

  • 2009 - 2011
    • •
  • 705 tis. Kč
    • •
  • 705 tis. Kč
    • •
  • AV ČR
Project

Exploitation of surface phenomena for elimination of extended defects in semiconductor nanostructures (GA24-12526S)

Semiconductor films are often grown on lattice-mismatched substrates, which and not on the origin of nucleation of extended defects. In this project, we formulate a new of extended defects. Optimization of the early stage o...

Materials engineering

  • 2024 - 2026
    • •
  • 6 291 tis. Kč
    • •
  • 6 291 tis. Kč
    • •
  • GA ČR
  • 1 - 10 out of 3 840