Phonon and Structural Changes in Deformed Bernal Stacked Bilayer Graphene

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11310%2F12%3A10130686" target="_blank" >RIV/00216208:11310/12:10130686 - isvavai.cz</a>
Alternative codes found
RIV/61388955:_____/12:00376011
Result on the web
<a href="http://dx.doi.org/10.1021/nl203565p" target="_blank" >http://dx.doi.org/10.1021/nl203565p</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/nl203565p" target="_blank" >10.1021/nl203565p</a>

Result language
angličtina
Original language name
Phonon and Structural Changes in Deformed Bernal Stacked Bilayer Graphene
Original language description
We present the first Raman spectroscopic study of Bernal bilayer graphene flakes under uniaxial tension. Apart from a purely mechanical behavior in flake regions where both layers are strained evenly, certain effects stem from inhomogeneous stress distribution across the layers. These phenomena such as the removal of inversion symmetry in bilayer graphene may have important implications in the band gap engineering, providing an alternative route to induce the formation of a band gap.
Czech name
—
Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CG - Electrochemistry
OECD FORD branch
—

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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