Single Layer Molybdenum Disulfide under Direct Out-of-Plane Compression: Low-Stress Band-Gap Engineering
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11310%2F15%3A10294790" target="_blank" >RIV/00216208:11310/15:10294790 - isvavai.cz</a>
Alternative codes found
RIV/61388955:_____/15:00443984
Result on the web
<a href="http://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b00229" target="_blank" >http://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b00229</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acs.nanolett.5b00229" target="_blank" >10.1021/acs.nanolett.5b00229</a>
Alternative languages
Result language
angličtina
Original language name
Single Layer Molybdenum Disulfide under Direct Out-of-Plane Compression: Low-Stress Band-Gap Engineering
Original language description
Tuning the electronic structure of 2D materials is a very powerful asset toward tailoring their properties to suit the demands of future applications in optoelectronics. Strain engineering is one of the most promising methods in this regard. We demonstrate that even very small out-of-plane axial compression readily modifies the electronic structure of monolayer MoS2. As we show through in situ resonant and nonresonant Raman spectroscopy and photoluminescence measurements combined with theoretical calculations, the transition from direct to indirect band gap semiconductor takes place at TILDE OPERATOR+D910.5 GPa, and the transition to a semimetal occurs at stress smaller than 3 GPa.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CF - Physical chemistry and theoretical chemistry
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Nano Letters
ISSN
1530-6984
e-ISSN
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Volume of the periodical
15
Issue of the periodical within the volume
5
Country of publishing house
US - UNITED STATES
Number of pages
8
Pages from-to
3139-3146
UT code for WoS article
000354906000055
EID of the result in the Scopus database
2-s2.0-84929380204