2D or not 2D-Layered Functional (C, N) Materials "Beyond Silicon and Graphene"

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11310%2F16%3A10328269" target="_blank" >RIV/00216208:11310/16:10328269 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1002/macp.201500312" target="_blank" >http://dx.doi.org/10.1002/macp.201500312</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/macp.201500312" target="_blank" >10.1002/macp.201500312</a>

Result language

angličtina

Original language name

2D or not 2D-Layered Functional (C, N) Materials "Beyond Silicon and Graphene"

Original language description

Thin layers of the semiconductor silicon are omnipresent in all electronic devices. Ongoing, exponential improvement in size, performance, and cost of a single transistor is predicted to face serious challenges in the near feature. With the era of "postsilicon electronics" on the horizon, researchers are racing to address issues of material security, less energy-intensive manufacturing, and design of device properties. The chemistry of carbon and nitrogen (C, N) provides an attractive avenue toward the modular design of new 2D materials "beyond silicon and graphene."

Czech name

—

Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

CC - Organic chemistry

OECD FORD branch

—

Project

—

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2016

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Macromolecular Chemistry and Physics

ISSN

1022-1352

e-ISSN

—

Volume of the periodical

217

Issue of the periodical within the volume

2

Country of publishing house

DE - GERMANY

Number of pages

10

Pages from-to

232-241

UT code for WoS article

000369769600010

EID of the result in the Scopus database

2-s2.0-84955187887