Near-room-temperature Chern insulator and Dirac spin-gapless semiconductor: nickel chloride monolayer
Result description
A great obstacle for practical applications of the quantum anomalous Hall (QAH) effect is the lack of suitable QAH materials (Chern insulators) with a large non-trivial band gap, room-temperature magnetic order and high carrier mobility. Based on first-principles calculations it is shown here that a nickel chloride (NiCl3) monolayer has all these characteristics. Thus, the NiCl3 monolayer represents a new class of Dirac materials with Dirac spin-gapless semiconducting properties and high-temperature ferromagnetism (similar to 400 K). Taking into account the spin-orbit coupling, the NiCl3 monolayer becomes an intrinsic Chern insulator with a large non-trivial band gap of similar to 24 meV, corresponding to an operating temperature as high as similar to 280 K at which the quantum anomalous Hall effect could be observed. The calculated large non-trivial gap, high Curie temperature and single-spin Dirac states reported herein for the NiCl3 monolayer led us to propose that this material gives a great promise for potential realization of a near-room temperature QAH effect and potential applications in spintronics. Last but not least the calculated Fermi velocities of Dirac fermions of about 4 x 10(5) m s(-1) indicate very high mobility in NiCl3 monolayers.
Keywords
toolstatesgrapheneintrinsic ferromagnetismquantized hall conductancelocalized Wannier functions
The result's identifiers
Result code in IS VaVaI
Result on the web
DOI - Digital Object Identifier
Alternative languages
Result language
angličtina
Original language name
Near-room-temperature Chern insulator and Dirac spin-gapless semiconductor: nickel chloride monolayer
Original language description
A great obstacle for practical applications of the quantum anomalous Hall (QAH) effect is the lack of suitable QAH materials (Chern insulators) with a large non-trivial band gap, room-temperature magnetic order and high carrier mobility. Based on first-principles calculations it is shown here that a nickel chloride (NiCl3) monolayer has all these characteristics. Thus, the NiCl3 monolayer represents a new class of Dirac materials with Dirac spin-gapless semiconducting properties and high-temperature ferromagnetism (similar to 400 K). Taking into account the spin-orbit coupling, the NiCl3 monolayer becomes an intrinsic Chern insulator with a large non-trivial band gap of similar to 24 meV, corresponding to an operating temperature as high as similar to 280 K at which the quantum anomalous Hall effect could be observed. The calculated large non-trivial gap, high Curie temperature and single-spin Dirac states reported herein for the NiCl3 monolayer led us to propose that this material gives a great promise for potential realization of a near-room temperature QAH effect and potential applications in spintronics. Last but not least the calculated Fermi velocities of Dirac fermions of about 4 x 10(5) m s(-1) indicate very high mobility in NiCl3 monolayers.
Czech name
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Czech description
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Classification
Type
Jimp - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10403 - Physical chemistry
Result continuities
Project
GBP106/12/G015: Intelligent design of nanoporous adsorbents and catalysts
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Nanoscale
ISSN
2040-3364
e-ISSN
—
Volume of the periodical
9
Issue of the periodical within the volume
6
Country of publishing house
GB - UNITED KINGDOM
Number of pages
7
Pages from-to
2246-2252
UT code for WoS article
000395626600019
EID of the result in the Scopus database
2-s2.0-85012113479
Basic information
Result type
Jimp - Article in a specialist periodical, which is included in the Web of Science database
OECD FORD
Physical chemistry
Year of implementation
2017