Laser-Induced Ultrafast Spin Injection in All-Semiconductor Magnetic CrI3/WSe2 Heterobilayer
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11310%2F24%3A10481129" target="_blank" >RIV/00216208:11310/24:10481129 - isvavai.cz</a>
Result on the web
<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=m0zWLjML~D" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=m0zWLjML~D</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acsnano.3c12926" target="_blank" >10.1021/acsnano.3c12926</a>
Alternative languages
Result language
angličtina
Original language name
Laser-Induced Ultrafast Spin Injection in All-Semiconductor Magnetic CrI3/WSe2 Heterobilayer
Original language description
Spin injection stands out as a crucial method employed for initializing, manipulating, and measuring the spin states of electrons, which are fundamental to the creation of qubits in quantum computing. However, ensuring efficient spin injection while maintaining compatibility with standard semiconductor processing techniques is a significant challenge. Herein, we demonstrate the capability of inducing an ultrafast spin injection into a WSe2 layer from a magnetic CrI3 layer on a femtosecond time scale, achieved through real-time time-dependent density functional theory calculations upon a laser pulse. Following the peak of the magnetic moment in the CrI3 sublayer, the magnetic moment of the WSe2 layer reaches a maximum of 0.89 mu(B) (per unit cell containing 4 WSe2 and 1 CrI3 units). During the spin dynamics, spin-polarized excited electrons transfer from the WSe2 layer to the CrI3 layer via type-II band alignment. The large spin splitting in conduction bands and the difference in the number of spin-polarized local unoccupied states available in the CrI3 layer lead to a net spin in the WSe2 layer. Furthermore, we confirmed that the number of available states, the spin-flip process, and the laser pulse parameters play important roles during the spin injection process. This work highlights the dynamic and rapid nature of spin manipulation in layered all-semiconductor systems, offering significant implications for the development and enhancement of quantum information processing technologies.
Czech name
—
Czech description
—
Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10403 - Physical chemistry
Result continuities
Project
—
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
ACS Nano
ISSN
1936-0851
e-ISSN
1936-086X
Volume of the periodical
18
Issue of the periodical within the volume
18
Country of publishing house
US - UNITED STATES
Number of pages
8
Pages from-to
11732-11739
UT code for WoS article
001227695700001
EID of the result in the Scopus database
2-s2.0-85191770663