Method of surface photovoltage extended to silicon wafers and solar cells of arbitrary thickness
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F01%3A00105672" target="_blank" >RIV/00216208:11320/01:00105672 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Method of surface photovoltage extended to silicon wafers and solar cells of arbitrary thickness
Original language description
Method of surface photovoltage extended to silicon wafers and solar cells of arbitrary thickness
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA102%2F99%2F0414" target="_blank" >GA102/99/0414: MOVPE prepared materials and structures for electronic and optoelectronic devices</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2001
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
17th European Photovoltaic Solar Energy Conference and Exhibition
ISBN
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ISSN
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e-ISSN
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Number of pages
13
Pages from-to
1-13
Publisher name
-
Place of publication
Germany
Event location
Germany
Event date
Jan 1, 2001
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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