Preparation and study of transport mechanism in GaAs/GaSb heterostructures
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F01%3A00105697" target="_blank" >RIV/00216208:11320/01:00105697 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Preparation and study of transport mechanism in GaAs/GaSb heterostructures
Original language description
Preparation and study of transport mechanism in GaAs/GaSb heterostructures
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA102%2F99%2F0414" target="_blank" >GA102/99/0414: MOVPE prepared materials and structures for electronic and optoelectronic devices</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2001
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Conference on Mid-Infrared Optoelectronics Materials and Devices
ISBN
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ISSN
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e-ISSN
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Number of pages
4
Pages from-to
3-6
Publisher name
MIOMD
Place of publication
Montpellier
Event location
Montpellier
Event date
Jan 1, 2001
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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