Method of the surface photovoltage extended to silicon wafers and solar cells of arbitrary thickness
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F02%3A00003564" target="_blank" >RIV/00216208:11320/02:00003564 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Method of the surface photovoltage extended to silicon wafers and solar cells of arbitrary thickness
Original language description
Method of the surface photovoltage extended to silicon wafers and solar cells of arbitrary thickness
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA102%2F99%2F0414" target="_blank" >GA102/99/0414: MOVPE prepared materials and structures for electronic and optoelectronic devices</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2002
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proc. 17th European Photovoltaic Solar Energy Conference Munich, WIP- Munich and ETA- Florence
ISBN
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ISSN
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e-ISSN
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Number of pages
3
Pages from-to
143-145
Publisher name
neuveden
Place of publication
Florence
Event location
Florence
Event date
Jan 1, 2002
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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