Structure and properties of silicon thin films deposited at low substrate temperatures
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F03%3A00002228" target="_blank" >RIV/00216208:11320/03:00002228 - isvavai.cz</a>
Alternative codes found
RIV/68378271:_____/03:02030495 RIV/61389005:_____/03:02030495
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
Structure and properties of silicon thin films deposited at low substrate temperatures
Original language description
Structure and properties of silicon thin films deposited at low substrate temperatures
Czech name
—
Czech description
—
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
—
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2003
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Japanese Journal of Applied Physics
ISSN
0021-4922
e-ISSN
—
Volume of the periodical
42
Issue of the periodical within the volume
8B
Country of publishing house
JP - JAPAN
Number of pages
1
Pages from-to
"L987"-"L989"
UT code for WoS article
—
EID of the result in the Scopus database
—