Effect of Silicon Nitride Layers on the Minority Carrier Diffusion Length in c-Si Wafers
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F06%3A00002748" target="_blank" >RIV/00216208:11320/06:00002748 - isvavai.cz</a>
Alternative codes found
RIV/67985882:_____/06:00082822 RIV/44555601:13440/06:00003276
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Effect of Silicon Nitride Layers on the Minority Carrier Diffusion Length in c-Si Wafers
Original language description
Effect of Silicon Nitride Layers on the Minority Carrier Diffusion Length in c-Si Wafers
Czech name
Vliv vrstev nitridu křemíku na difúzní délku minoritních nosičů v Si
Czech description
Vliv vrstev nitridu křemíku na difúzní délku minoritních nosičů v Si
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/LC06041" target="_blank" >LC06041: Preparation, modification and characterization of materials by energetic radiation.</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2006
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Applied Physics
ISSN
0021-8979
e-ISSN
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Volume of the periodical
100
Issue of the periodical within the volume
113716
Country of publishing house
US - UNITED STATES
Number of pages
6
Pages from-to
1-6
UT code for WoS article
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EID of the result in the Scopus database
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