Study of Hydrogen-Defect Interaction in Thin Nb Film on Si Substrate Using Positron Annihilation
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F06%3A00003110" target="_blank" >RIV/00216208:11320/06:00003110 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Study of Hydrogen-Defect Interaction in Thin Nb Film on Si Substrate Using Positron Annihilation
Original language description
Study of Hydrogen-Defect Interaction in Thin Nb Film on Si Substrate Using Positron Annihilation
Czech name
Studium interakce vodíku s defekty v tenkých vrstvách Nb na Si substrátu
Czech description
Studium interakce vodíku s defekty v tenkých vrstvách Nb na Si substrátu
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA202%2F05%2F0074" target="_blank" >GA202/05/0074: Study of hydrogen-induced defects in metals</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2006
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Materials Structure in Chemistry. Biology. Physics and Technology
ISSN
1211-5894
e-ISSN
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Volume of the periodical
13
Issue of the periodical within the volume
neuvedeno
Country of publishing house
CZ - CZECH REPUBLIC
Number of pages
8
Pages from-to
82-89
UT code for WoS article
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EID of the result in the Scopus database
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