XPS study of the formation of ultrathin GaN film on GaAs (100)
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F08%3A00100477" target="_blank" >RIV/00216208:11320/08:00100477 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
XPS study of the formation of ultrathin GaN film on GaAs (100)
Original language description
XPS study of the formation of ultrathin GaN film on GaAs (100)
Czech name
XPS studie ultratenkých vrstev GaN na GaAs(100)
Czech description
XPS studie ultratenkých vrstev GaN na GaAs(100)
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2008
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Applied Surface Science
ISSN
0169-4332
e-ISSN
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Volume of the periodical
254
Issue of the periodical within the volume
13
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
4
Pages from-to
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UT code for WoS article
000255344500065
EID of the result in the Scopus database
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