Crystal Structure of Defect-Containing Semiconductor Nanocrystals - an X-Ray Diffraction Study
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F09%3A00206573" target="_blank" >RIV/00216208:11320/09:00206573 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Crystal Structure of Defect-Containing Semiconductor Nanocrystals - an X-Ray Diffraction Study
Original language description
We have studied the defect structure of semiconductor nanocrystals by x-ray diffraction and Debye-formula simulation
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2009
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Applied Crystallography
ISSN
0021-8898
e-ISSN
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Volume of the periodical
42
Issue of the periodical within the volume
neuveden
Country of publishing house
DK - DENMARK
Number of pages
13
Pages from-to
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UT code for WoS article
000268068000014
EID of the result in the Scopus database
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