Cerium oxide stoichiometry alteration via Sn deposition: Influence of temperature

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F09%3A00206584" target="_blank" >RIV/00216208:11320/09:00206584 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Cerium oxide stoichiometry alteration via Sn deposition: Influence of temperature
Original language description
Cerium oxide layers grown on Cu(111) were studied by conventional X-ray and resonant photoelectron spectroscopy with synchrotron radiation. A quantitative method of determining the cerium chemical state from the Ce 3d photoelectron spectra is described in detail. After the preparation of the ceria layer, Sn films of different thickness were evaporated onto the surface at temperatures of 120, 300 and 520 K. In all three cases, the deposited Sn was oxidized, CeO2 was partially reduced, and a mixed Sn-Ce-Ooxide was formed. The quantitative extent of these reactions was found to be determined by limited diffusion of the deposited Sn atoms into the ceria layer at low temperature. The excess of tin formed a metallic overlayer on the sample surface.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
<a href="/en/project/LC06058" target="_blank" >LC06058: Center of synchrotron radiation materials study</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2009
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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