Pt2+,4+ ions in CeO2 rf-sputtered thin films

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F10%3A10070061" target="_blank" >RIV/00216208:11320/10:10070061 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Pt2+,4+ ions in CeO2 rf-sputtered thin films

Original language description

The interaction of Pt with CeO2 in Pt-doped cerium oxide layers deposited on a Si wafer at normal and grazing incidence, and on multiwall carbon nanotubes (MWCNTs), was investigated by using X-ray photoelectron spectroscopy (XPS). 30-nm-thick Pt-doped CeO2 layers were deposited by rf-magnetron sputtering of a composite CeO2 - Pt target. XPS showed formation of cerium oxide with completely ionized species Pt-2+,Pt-4+ embedded in the film. The Pt2+/Pt4+ ratio depends on the deposition angle and increasesin the case of the film deposition on the MWCNTs. This behavior was explained by the dependence of the polycrystalline film grain morphology on a deposition angle.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Surface and Interface Analysis

ISSN

0142-2421

e-ISSN

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Volume of the periodical

42

Issue of the periodical within the volume

6-7

Country of publishing house

US - UNITED STATES

Number of pages

4

Pages from-to

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UT code for WoS article

000281149700094

EID of the result in the Scopus database

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