Fractional quantum Hall effect in CdTe

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F10%3A10070505" target="_blank" >RIV/00216208:11320/10:10070505 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Fractional quantum Hall effect in CdTe
Original language description
The fractional quantum Hall (FQH) effect is reported in a high mobility CdTe quantum well at millikelvin temperatures. Fully developed FQH states are observed at filling factor 4/3 and 5/3 and are found to be both spin-polarized ground state for which the lowest energy excitation is not a spin flip. This can be accounted for by the relatively high intrinsic Zeeman energy in this single valley two-dimensional electron gas. FQH minima are also observed in the first excited (N=1) Landau level at filling factor 7/3 and 8/3 for intermediate temperatures. In contrast, the 5/2 FQH state remains absent down to T=10 mK.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical
Physical Review B - Condensed Matter and Materials Physics
ISSN
1098-0121
e-ISSN
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Volume of the periodical
82
Issue of the periodical within the volume
8
Country of publishing house
US - UNITED STATES
Number of pages
4
Pages from-to
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UT code for WoS article
000280849800001
EID of the result in the Scopus database
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