Electronic structure of Bi lines on clean and H-passivated Si(100)

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F10%3A10071285" target="_blank" >RIV/00216208:11320/10:10071285 - isvavai.cz</a>

Result on the web

—

DOI - Digital Object Identifier

—

Result language

angličtina

Original language name

Electronic structure of Bi lines on clean and H-passivated Si(100)

Original language description

By means of scanning tunnelling microscopy and spectroscopy, we have investigated the electronic structure of Bi nanolines on clean and H-passivated Si(100) surfaces. Maps of the local density of states (LDOS) images of the Bi nanolines are presented forthe first time. The spectra obtained for nanolines on a clean Si surface and the LDOS images agree with ab initio predicted spectra for the Haiku structure. For nanolines on a H-passivated surface, the spectra obtained suggest that the Bi nanoline may locally pin the surface Fermi level, and the LDOS images taken at low bias show a distribution of states different to what was expected at the Bi nanolines. The results are discussed with respect to use of the nanolines as atomic wire interconnections.

Czech name

—

Czech description

—

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

—

Project

—

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Physics Condensed Matter

ISSN

0953-8984

e-ISSN

—

Volume of the periodical

22

Issue of the periodical within the volume

17

Country of publishing house

GB - UNITED KINGDOM

Number of pages

6

Pages from-to

—

UT code for WoS article

000276547300007

EID of the result in the Scopus database

—