Hard-X-ray Photoelectron Diffraction from Si(001) Covered by a 0-7-nm-Thick SiO2 Layer

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F10%3A10071375" target="_blank" >RIV/00216208:11320/10:10071375 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Hard-X-ray Photoelectron Diffraction from Si(001) Covered by a 0-7-nm-Thick SiO2 Layer

Original language description

X-ray photoelectron diffraction has become a common method to determine element-specific local atomic surface structure. The use of hard X-rays makes this method bulk-sensitive and capable of studying the atomic structure of new materials such as multilayers and buried layers. We present the first Cr K_alpha-excited angle-resolved photoelectron diffraction from Si(001) covered by a 0-7-nm thick SiO2 layer and demonstrate the information depth of this technique. The measured results are compared with a cluster model simulation.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Applied Physics Express

ISSN

1882-0778

e-ISSN

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Volume of the periodical

3

Issue of the periodical within the volume

5

Country of publishing house

JP - JAPAN

Number of pages

3

Pages from-to

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UT code for WoS article

000277992300022

EID of the result in the Scopus database

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