Study of Gallium Interaction with Metal-oxide Surfaces
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F10%3A10071393" target="_blank" >RIV/00216208:11320/10:10071393 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Study of Gallium Interaction with Metal-oxide Surfaces
Original language description
In presented work, X-ray Photoelectron Spectroscopy (XPS) was used to study interaction of gallium deposited on different metal-oxide surfaces. CeOx/Si, gama-Al2O3, Al2O3/Al, Al foil and Si were used as substrates. Ga was deposited in number of steps upto a thickness of several nanometers. Prepared samples were further studied under different temperature conditions. Gallium oxidation state was determined by Auger parameter analysis. Interaction of gallium with highly oxidized substrates led to galliumoxidation. The interaction of gallium with surface was strongly influenced by oxidation state of particular substrate. In addition, strong interaction between gallium and CeOx support occurred.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
WDS'10 Proceedings of Contributed Papers: Part III - Physics
ISBN
978-80-7378-141-5
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
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Publisher name
Matfyzpress
Place of publication
Praha
Event location
Praha
Event date
Jun 1, 2010
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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