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Photoconductivity Mapping of Semi-Insulating CdZnTe

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F11%3A10100828" target="_blank" >RIV/00216208:11320/11:10100828 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1109/TNS.2011.2147333" target="_blank" >http://dx.doi.org/10.1109/TNS.2011.2147333</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1109/TNS.2011.2147333" target="_blank" >10.1109/TNS.2011.2147333</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Photoconductivity Mapping of Semi-Insulating CdZnTe

  • Original language description

    Semi-insulating CdZnTe crystals were studied by photoconductivity mapping using both the contactless method and measurement with evaporated Au contacts. We evaluated the distribution of space charge analyzing the slope of lux-ampere characteristics. Mobility/lifetime product maps were extracted fitting the Hecht relation to voltampere characteristics measured with a weak light at wavelength 750 nm. Correlation analysis of contactless resistivity and photoconductivity maps shows, that both these parameters are anticorrelated. This fact can be explained by a shift of Fermi level changing the average occupation of a midgap level. A decrease of occupation with an increasing resistivity results in an increase of electron trapping and decreased photoconductivity. This explanation is supported by simulating the dependence of the photocurrent on the Fermi level position near the midgap using parameters of midgap levels assumed in state-of-the art radiation detectors.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GAP102%2F10%2F0148" target="_blank" >GAP102/10/0148: Influence of Te inclusions on performance of CdTe and CdZnTe radiation detectors</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach

Others

  • Publication year

    2011

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    IEEE Transactions on Nuclear Science

  • ISSN

    0018-9499

  • e-ISSN

  • Volume of the periodical

    58

  • Issue of the periodical within the volume

    4

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    8

  • Pages from-to

    1953-1957

  • UT code for WoS article

    000293977200010

  • EID of the result in the Scopus database