Dislocation-induced electronic levels in semi-insulated CdTe
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F11%3A10102973" target="_blank" >RIV/00216208:11320/11:10102973 - isvavai.cz</a>
Result on the web
<a href="http://www.sciencedirect.com/science/article/pii/S0168900210013197" target="_blank" >http://www.sciencedirect.com/science/article/pii/S0168900210013197</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.nima.2010.06.129" target="_blank" >10.1016/j.nima.2010.06.129</a>
Alternative languages
Result language
angličtina
Original language name
Dislocation-induced electronic levels in semi-insulated CdTe
Original language description
Deformation-induced defects in semi-insulating CdTe and CdZnTe were studied by photoluminescence. The Y-band at 1,474 eV and midgap levels intesify inside and near deformed areas of the samples. The findings demonstrate that dislocation=induced defects degrade charge collection in gamma radiation detectors.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Nuclear Instruments & Methods in Physics Research - Section A
ISSN
0168-9002
e-ISSN
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Volume of the periodical
2011 / 633
Issue of the periodical within the volume
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Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
2
Pages from-to
"S81"-"S82"
UT code for WoS article
000292782400024
EID of the result in the Scopus database
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