Characterization of microstructural defects in melt grown ZnO single crystals
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F11%3A10104072" target="_blank" >RIV/00216208:11320/11:10104072 - isvavai.cz</a>
Result on the web
<a href="http://jap.aip.org/resource/1/japiau/v109/i6/p063516_s1" target="_blank" >http://jap.aip.org/resource/1/japiau/v109/i6/p063516_s1</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.3559264" target="_blank" >10.1063/1.3559264</a>
Alternative languages
Result language
angličtina
Original language name
Characterization of microstructural defects in melt grown ZnO single crystals
Original language description
Various nominally undoped, hydrothermally or melt grown (MG) ZnO single crystals have been investigated by standard positron lifetime measurements. Furthermore, optical transmission measurements and structural characterizations have been performed; the content of hydrogen in the bound state was determined by nuclear reaction analysis. A positron lifetime of 165-167 ps, measured for a brownish MG ZnO sample containing (0.30 +-0.03) at.-% of bound hydrogen, matches perfectly the value found for colorlessMG ZnO crystals. The edge shift, observed in the "blue light domain" of the optical absorption for the former sample with respect to the latter samples, is estimated to be 0.70 eV, and found equal to a value reported previously. The possible role of zincinterstitials is considered and discussed. Microstructure analysis by X-ray diffraction and transmission electron microscopy revealed the presence of stacking faults in MG crystals in a high concentration, which suggests these defects to
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Applied Physics
ISSN
0021-8979
e-ISSN
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Volume of the periodical
109
Issue of the periodical within the volume
6
Country of publishing house
US - UNITED STATES
Number of pages
9
Pages from-to
063516, 1-9
UT code for WoS article
000289149900034
EID of the result in the Scopus database
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