Carrier Relaxation in Epitaxial Graphene Photoexcited Near the Dirac Point

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F11%3A10104844" target="_blank" >RIV/00216208:11320/11:10104844 - isvavai.cz</a>
Result on the web
<a href="http://link.aps.org/doi/10.1103/PhysRevLett.107.237401" target="_blank" >http://link.aps.org/doi/10.1103/PhysRevLett.107.237401</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1103/PhysRevLett.107.237401" target="_blank" >10.1103/PhysRevLett.107.237401</a>

Result language
angličtina
Original language name
Carrier Relaxation in Epitaxial Graphene Photoexcited Near the Dirac Point
Original language description
We study the carrier dynamics in epitaxially grown graphene in the range of photon energies from 10 to 250 meV. The experiments complemented by microscopic modeling reveal that the carrier relaxation is significantly slowed down as the photon energy is tuned to values below the optical-phonon frequency; however, owing to the presence of hot carriers, optical-phonon emission is still the predominant relaxation process. For photon energies about twice the value of the Fermi energy, a transition from pump-induced transmission to pump-induced absorption occurs due to the interplay of interband and intraband processes.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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