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Slow-Polishing Iodine-Based Etchant for CdTe and CdZnTe Single Crystals

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F12%3A10127045" target="_blank" >RIV/00216208:11320/12:10127045 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1007/s11664-012-2001-1" target="_blank" >http://dx.doi.org/10.1007/s11664-012-2001-1</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1007/s11664-012-2001-1" target="_blank" >10.1007/s11664-012-2001-1</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Slow-Polishing Iodine-Based Etchant for CdTe and CdZnTe Single Crystals

  • Original language description

    We report on new etching solutions for treatment of CdTe and CdZnTe surfaces based on the iodine-emerging etchant composition KIO3-KI-citric acid (C6H8O7). CdTe samples with (111), (110), and (100) orientations, and also Cd1-x Zn (x) Te (x = 0.04, 0.1) samples with (111), (110), (100), and (211) orientations were investigated. The dissolution rate was determined as a function of solution composition, etchant storage time, disc rotation speed, and temperature. It was established that this chemical dissolution is diffusion controlled. Study of the chemical composition and structure of (211)B Cd1-x Zn (x) Te surfaces etched under different conditions was carried out. x-Ray photoelectron spectroscopy measurements showed that a stoichiometric surface was achieved after briefly heating the etched surface in a vacuum. Reflection high-energy electron diffraction measurements revealed a high-quality single-crystalline surface layer in samples etched with KIO3-KI-citric acid solutions as compare

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GAP102%2F10%2F0148" target="_blank" >GAP102/10/0148: Influence of Te inclusions on performance of CdTe and CdZnTe radiation detectors</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2012

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Electronic Materials

  • ISSN

    0361-5235

  • e-ISSN

  • Volume of the periodical

    41

  • Issue of the periodical within the volume

    10

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    8

  • Pages from-to

    2838-2845

  • UT code for WoS article

    000308655500028

  • EID of the result in the Scopus database