Growth of a three-dimensional anisotropic lattice of Ge quantum dots in an amorphous alumina matrix

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F13%3A10140018" target="_blank" >RIV/00216208:11320/13:10140018 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1107/S0021889813008182" target="_blank" >http://dx.doi.org/10.1107/S0021889813008182</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1107/S0021889813008182" target="_blank" >10.1107/S0021889813008182</a>

Result language

angličtina

Original language name

Growth of a three-dimensional anisotropic lattice of Ge quantum dots in an amorphous alumina matrix

Original language description

Simple processes for the preparation of semiconductor quantum dot lattices embedded in dielectric amorphous matrices play an important role in various nanotechnology applications. Of particular interest are quantum dot lattices with properties that differ significantly in different directions parallel to the material surface. Here, a simple method is demonstrated for the fabrication of an anisotropic lattice of Ge quantum dots in an amorphous Al2O3 matrix by a self-assembly process. A specific deposition geometry with an oblique incidence of the Ge and Al2O3 adparticles was used during magnetron sputtering deposition to achieve the desired anisotropy. The observed Ge quantum dot ordering is explained by a combination of directional diffusion of adparticles from the Ge and Al(2)O(3)targets and a shadowing process which occurs during deposition as a result of the specific surface morphology. The prepared material shows a strong anisotropy of the electrical conductivity in different direc

Czech name

—

Czech description

—

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

—

Project

<a href="/en/project/GAP204%2F11%2F0785" target="_blank" >GAP204/11/0785: Self-organized growth and structure transitions of nanocrystals</a><br>

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2013

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Applied Crystallography

ISSN

0021-8898

e-ISSN

—

Volume of the periodical

46

Issue of the periodical within the volume

March

Country of publishing house

DK - DENMARK

Number of pages

7

Pages from-to

709-715

UT code for WoS article

000318943300015

EID of the result in the Scopus database

—