Physical properties of Al doped Ba hexagonal ferrite thin films

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F13%3A10159038" target="_blank" >RIV/00216208:11320/13:10159038 - isvavai.cz</a>

Alternative codes found

RIV/61989100:27350/13:86088670

Result on the web

<a href="http://dx.doi.org/10.1063/1.4788699" target="_blank" >http://dx.doi.org/10.1063/1.4788699</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.4788699" target="_blank" >10.1063/1.4788699</a>

Result language

angličtina

Original language name

Physical properties of Al doped Ba hexagonal ferrite thin films

Original language description

We developed the thin film microwave magnetic material, M-type barium hexagonal ferrite (BaM) doped with Al, for signal processing devices operating above 40 GHz with little to no applied magnetic field. Al was chosen as the dopant material because it significantly increases the already strong anisotropy field of BaM. A series of thin film BaAlxFe12-xO19 samples, x ranging from 0 to 2 in 0.25 steps, were deposited on Pt templates using a metal-organic decomposition growth technique. The resulting filmsare polycrystalline and highly textured, with the hexagonal c-axis directed out of plane. These films are also self-biasing; easy axis hysteresis loops have a high squareness ratio, s, in the 0.83-0.92 range. As expected, the anisotropy field increases with x, ranging from 1.34 to 2.19 x 10(6) A/m (16.9-27.5 kOe) for x = 0-2, while the saturation magnetization M-s decreases with x, ranging from 0.334 to 0.175 x 10(6) A/m (4 pi M-s = 4.2-2.2 kG) for x = 0-2. These values were measured at

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

<a href="/en/project/GAP205%2F11%2F2137" target="_blank" >GAP205/11/2137: Magnetophotonic interactions in realistic nanostructures</a><br>

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2013

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

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Volume of the periodical

113

Issue of the periodical within the volume

4

Country of publishing house

US - UNITED STATES

Number of pages

12

Pages from-to

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UT code for WoS article

000314724500061

EID of the result in the Scopus database

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