Influence of boron doping and hydrogen passivation on recombination of photoexcited charge carriers in silicon nanocrystal/SiC multilayers

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F13%3A10173370" target="_blank" >RIV/00216208:11320/13:10173370 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1063/1.4818332" target="_blank" >http://dx.doi.org/10.1063/1.4818332</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.4818332" target="_blank" >10.1063/1.4818332</a>

Result language
angličtina
Original language name
Influence of boron doping and hydrogen passivation on recombination of photoexcited charge carriers in silicon nanocrystal/SiC multilayers
Original language description
The influence of boron (B)-doping and remote plasma hydrogen passivation on the photoexcited charge carrier recombination in silicon nanocrystal/SiC multilayers was investigated in detail. The samples were prepared by high temperature annealing of amorphous (intrinsic and B-doped) Si1-xCx/SiC superlattices. The photoluminescence (PL) intensity of samples with B-doped silicon rich carbide layers was found to be up to two orders of magnitude larger and spectrally red shifted in comparison with that of theother samples. Hydrogen passivation leads to an additional increase in PL intensities. The PL decay can be described well by a mono-exponential function with a characteristic decay time of a few microseconds. This behavior agrees well with the picture of localized PL centers (surface states) together with the passivation of non-radiative defects by boron. The samples with B-doped SiC layers exhibit an additional PL band in the green spectral region that is quenched by hydrogen passivati
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BH - Optics, masers and lasers
OECD FORD branch
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Project
<a href="/en/project/7E11021" target="_blank" >7E11021: Silicon Nanodots for Solar Cell Tandem</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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