Epitaxial CeO2 thin films for a mechanism study of resistive random access memory (ReRAM)
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F13%3A10192093" target="_blank" >RIV/00216208:11320/13:10192093 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1007/s10008-013-2200-6" target="_blank" >http://dx.doi.org/10.1007/s10008-013-2200-6</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1007/s10008-013-2200-6" target="_blank" >10.1007/s10008-013-2200-6</a>
Alternative languages
Result language
angličtina
Original language name
Epitaxial CeO2 thin films for a mechanism study of resistive random access memory (ReRAM)
Original language description
A thin epitaxial CeO2 film was grown on a Cu(111) single crystal in order to investigate the mechanism of resistive memory/switching devices with an ultimately thin high-k dielectric film. A small amount of Pt was deposited on the CeO2 film and the Pt/CeO2/Cu structure was characterized by conductive atomic force microscopy and X-ray photoelectron spectroscopy. It was found that the grown epitaxial CeO2 film was fully oxidized, i.e., the valence of Ce atoms in the film was completely Ce4+. However, after the deposition of a small amount of Pt, it was revealed that Ce atoms were partially reduced to Ce3+ in full thickness of the film. The Pt/CeO2/Cu structure did not show switching behavior in resistance. The observed reduction of CeO2 film is considered to be responsible to the non-switching behavior. The thermodynamics of the reduction of the CeO2 film and the kinetics of oxygen diffusion in the reduced CeO2 film are discussed.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Solid State Electrochemistry
ISSN
1432-8488
e-ISSN
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Volume of the periodical
17
Issue of the periodical within the volume
12
Country of publishing house
DE - GERMANY
Number of pages
8
Pages from-to
3137-3144
UT code for WoS article
000327077000022
EID of the result in the Scopus database
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