Optical study of carrier diffusion and recombination in CVD diamond

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F13%3A10193637" target="_blank" >RIV/00216208:11320/13:10193637 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1002/pssa.201300034" target="_blank" >http://dx.doi.org/10.1002/pssa.201300034</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/pssa.201300034" target="_blank" >10.1002/pssa.201300034</a>

Result language
angličtina
Original language name
Optical study of carrier diffusion and recombination in CVD diamond
Original language description
We report on the measurements of nonequilibrium carrier dynamics in monocrystalline diamond prepared by the chemical vapor deposition (CVD) technique. Nonlinearly excited laser-induced transient grating (LITG) and time-resolved photoluminescence (PL) were used for investigation of carrier diffusion and recombination. Diffusion constant was observed to be strongly dependent on the sample temperature and carrier density (D=2.5-35cm(2)s(-1)) what was explained in terms of the density dependent carrier-carrier scattering. The new method based on the time-resolved PL was proposed for measuring the diffusion and recombination dynamics of excitons. The measured exciton lifetime (FE)=700-800ns was temperature independent between 100 and 295K.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BH - Optics, masers and lasers
OECD FORD branch
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Project
<a href="/en/project/GD202%2F09%2FH041" target="_blank" >GD202/09/H041: Physics of nanostructures</a><br>
Continuities
S - Specificky vyzkum na vysokych skolach

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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