Hot-phonon-induced indirect absorption in silicon nanocrystals

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F13%3A10193642" target="_blank" >RIV/00216208:11320/13:10193642 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1063/1.4829006" target="_blank" >http://dx.doi.org/10.1063/1.4829006</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.4829006" target="_blank" >10.1063/1.4829006</a>

Result language
angličtina
Original language name
Hot-phonon-induced indirect absorption in silicon nanocrystals
Original language description
We studied the nonlinear transient absorption dynamics in silicon nanocrystals/SiO2 superlattices. A different dependence of the measured dynamics on excitation intensity was observed depending on the relative position of the probe photon energy and theabsorption edge of nanocrystals. At low photon energies, the dynamics changed with excitation fluence and the signal was ascribed to excited state absorption. However, at photon energies above the absorption edge, the phonon enhancement of indirect absorption prevails over excited state absorption what is reflected in excitation fluence independent dynamics of transient absorption. (c) 2013 AIP Publishing LLC.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BH - Optics, masers and lasers
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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