Structure and composition of bismuth telluride topological insulators grown by molecular beam epitaxy

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F14%3A10284293" target="_blank" >RIV/00216208:11320/14:10284293 - isvavai.cz</a>

Alternative codes found

RIV/00216224:14740/14:00079372

Result on the web

<a href="http://dx.doi.org/10.1107/S1600576714020445" target="_blank" >http://dx.doi.org/10.1107/S1600576714020445</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1107/S1600576714020445" target="_blank" >10.1107/S1600576714020445</a>

Result language

angličtina

Original language name

Structure and composition of bismuth telluride topological insulators grown by molecular beam epitaxy

Original language description

The structure and composition of Bi2Te3-delta topological insulator layers grown by molecular beam epitaxy is studied as a function of beam flux composition. It is demonstrated that, depending on the Te/Bi2Te3 flux ratio, different layer compositions areobtained corresponding to a Te deficit delta varying between 0 and 1. On the basis of X-ray diffraction analysis and a theoretical description using a random stacking model, it is shown that for delta }= 0 the structure of the epilayers is described well by a random stacking of Te-Bi-Te-Bi-Te quintuple layers and Bi-Bi bilayers sharing the same basic hexagonal lattice structure. The random stacking model accounts for the observed surface step structure of the layers and compares very well with the measured X-ray data, from which the lattice parameters a and c as a function of the chemical composition were deduced. In particular, the in-plane lattice parameter a is found to continuously increase and the average distance of the (0001) he

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

<a href="/en/project/GA14-08124S" target="_blank" >GA14-08124S: High-resolution x-ray diffraction from random layered systems</a><br>

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2014

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Applied Crystallography

ISSN

0021-8898

e-ISSN

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Volume of the periodical

47

Issue of the periodical within the volume

6

Country of publishing house

DK - DENMARK

Number of pages

12

Pages from-to

1889-1900

UT code for WoS article

000345877900010

EID of the result in the Scopus database

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