Experimental observation of spin-dependent electron many-body effects in CdTe
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F14%3A10285413" target="_blank" >RIV/00216208:11320/14:10285413 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1063/1.4892399" target="_blank" >http://dx.doi.org/10.1063/1.4892399</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.4892399" target="_blank" >10.1063/1.4892399</a>
Alternative languages
Result language
angličtina
Original language name
Experimental observation of spin-dependent electron many-body effects in CdTe
Original language description
In semiconductors, the spin degree of freedom is usually disregarded in the theoretical treatment of electron many-body effects such as band-gap renormalization and screening of the Coulomb enhancement factor. Nevertheless, as was observed experimentallyin GaAs, not only the single-particle phase-space filling but also many-body effects are spin sensitive. In this paper, we report on time- and polarization-resolved differential transmission pump-probe measurements in CdTe, which has the same zincblendecrystal structure but different material parameters compared to that of GaAs. We show experimentally that at room temperature in CdTe-unlike in GaAs-the pump-induced decrease of transmission due to the band-gap renormalization can even exceed the transmission increase due to the phase-space filling, which enables to measure directly the spin-sensitivity of the band-gap renormalization. We also observed that the influence of the band-gap renormalization is more prominent at low temperatu
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BH - Optics, masers and lasers
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GAP204%2F12%2F0853" target="_blank" >GAP204/12/0853: Ultrafast optical manipulation of magnetic order in semiconductors</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Applied Physics
ISSN
0021-8979
e-ISSN
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Volume of the periodical
116
Issue of the periodical within the volume
5
Country of publishing house
US - UNITED STATES
Number of pages
8
Pages from-to
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UT code for WoS article
000341178900049
EID of the result in the Scopus database
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